KSC2755OMTF Fairchild Semiconductor, KSC2755OMTF Datasheet
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Manufacturer Part Number
KSC2755OMTF
Description
TRANSISTOR NPN 30V 20MA SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of KSC2755OMTF
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
30V
Frequency - Transition
600MHz
Noise Figure (db Typ @ F)
0.3dB @ 200MHz
Gain
20dB ~ 23dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 3mA, 10V
Current - Collector (ic) (max)
20mA
Mounting Type
Surface Mount
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
RF AMP, FOR VHF &TV TUNER
• Low NF, High G
• Forward AGC Capability to 30 dB
• NF=2.0dB (TYP.), G
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
I
h
f
C
G
I
NF
C
CBO
T
AGC
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
RE
PE
Symbol
Classification
Classification
h
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Power Gain
AGC Current
Noise Figure
FE
PE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
PE
=23dB (TYP.) at f=200MHz
Parameter
T
60 ~ 120
a
=25 C unless otherwise noted
T
R
Parameter
a
=25 C unless otherwise noted
KSC2755
Marking
V
V
V
f=1MHz, V
V
f=200MHz
f=200MHz
I
V
f=200MHz
E
CB
CE
CE
CE
CE
at G
=20V, I
=10V, I
=10V, I
=10V, I
=10V, I
H1 O
Test Condition
R
= -30dB
CB
E
C
C
C
C
=0
=3mA
=3mA
=3mA
=3mA
=10V, I
90 ~ 180
O
E
=0
h
FE
grade
1. Base 2. Emitter 3. Collector
Min.
400
60
20
-55 ~ 150
3
Value
150
150
30
30
20
5
Typ.
120
600
0.3
-10
2.0
23
120 ~ 240
1
Max.
240
-12
Y
0.1
0.5
0.3
SOT-23
Rev. A2, September 2002
2
Units
mW
mA
V
V
V
C
C
Units
MHz
mA
dB
dB
pF
A
Related parts for KSC2755OMTF
KSC2755OMTF Summary of contents
... FE f Current Gain Bandwidth Product T C Reverse Transfer Capacitance RE G Power Gain PE I AGC Current AGC NF Noise Figure h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC2755 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V =20V =10V, I =3mA =10V, I ...
... [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristics 10000 1000 100 10 0 [mA], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 1000 100 10 0 [mA], COLLECTOR CURRENT C Figure ©2002 Fairchild Semiconductor Corporation I = 120 A B 1000 I = 100 100 0 10000 1000 100 10 100 0.1 Figure 4. Base-Emitter Saturation Voltage 0.1 ...
... CONDUCTANCE re Figure 9. yre - f 5 yoe =10V =3mA C 5mA 1 f=100MHz 10mA 0 0.00 0.25 0.50 g [ms], CONDUCTANCE oe Figure 11. yoe - f ©2002 Fairchild Semiconductor Corporation (Continued f=100MHz 0 -20 -40 -60 125 150 175 200 -25 5mA -50 10mA 400MHz -75 -100 -125 0.2 0.3 0.4 - ...
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, September 2002 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...
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