PN5179 Fairchild Semiconductor, PN5179 Datasheet - Page 2
![TRANSISTOR RF NPN 12V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
PN5179
Manufacturer Part Number
PN5179
Description
TRANSISTOR RF NPN 12V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN5179.pdf
(12 pages)
Specifications of PN5179
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
2GHz
Noise Figure (db Typ @ F)
5dB @ 200MHz
Gain
15dB
Power - Max
350mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 3mA, 1V
Current - Collector (ic) (max)
50mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PN5179FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PN5179
Manufacturer:
FAIRCHILD
Quantity:
28 000
Part Number:
PN5179
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
SMALL SIGNAL CHARACTERISTICS
FUNCTIONAL TEST
OFF CHARACTERISTICS
ON CHARACTERISTICS
V
V
V
I
h
V
V
f
C
h
rb’C
NF
G
P
Symbol
CBO
T
FE
fe
CEO(
(BR)CBO
(BR)EBO
CE(
BE(
cb
O
pe
*
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n
Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
c
sus
)
)
)
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Collector Base Time Constant
Noise Figure
Amplifier Power Gain
Power Output
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
f = 100 MHz
V
I
f = 1.0 kHz
I
f = 31.9 MHz
I
R
V
f = 200 MHz
V
f
I
C
C
E
C
C
C
C
f = 0.1 to 1.0 MHz
C
C
C
CB
CB
CB
CE
CB
S
= 3.0 mA, I
= 1.0 A, I
= 10 A, I
= 3.0 mA, V
= 10 mA, I
= 10 mA, I
= 5.0 mA, V
= 2.0 mA, V
= 2.0 mA, V
= 1.5 mA, V
= 50 , f = 200 MHz
500 MHz
= 15 V, I
= 15 V, T
= 10 V, I
= 6.0 V, I
= 10 V, I
Test Conditions
C
E
B
B
E
E
E
B
C
A
= 0
CE
= 1.0 mA
= 1.0 mA
CE
= 0,
CE
CB
CE
= 0
= 0
= 12 mA,
= 0
= 150 C
= 5.0 mA,
= 1.0 V
= 6.0 V,
= 6.0 V,
= 6.0 V,
= 6.0 V,
NPN RF Transistor
Min
900
2.5
3.0
12
20
25
25
15
20
Max
2000
0.02
250
300
1.0
0.4
1.0
1.0
5.0
14
(continued)
Units
MHz
mW
dB
dB
pF
ps
V
V
V
V
V
A
A
3