PN3563_D74Z Fairchild Semiconductor, PN3563_D74Z Datasheet - Page 2

• Manufacturer Part Number: PN3563_D74Z
• Description: TRANS RF NPN 15V 50MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of PN3563_D74Z

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.5GHz
• Gain: 14dB ~ 26dB
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 8mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -

V
V
V
I
ON CHARACTERISTICS*
h
G
OFF CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
f
C
C
h
rb’C
FUNCTIONAL TEST
Symbol
*
CBO
T
FE
CEO(
(BR)CBO
(BR)EBO
fe
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
pe
obo
ibo
Electrical Characteristics
C
sus
)
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Amplifier Power Gain
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Collector Base Time Constant
Parameter
TA= 25°C unless otherwise noted
I
I
I
V
V
I
I
f = 200 MHz
I
f = 100 MHz
V
V
V
I
f = 1.0 MHz
I
f = 79.8 MHz
C
C
E
C
C
C
C
C
CB
CB
CB
CB
BE
= 3.0 mA, I
= 100 A, I
= 10 A, I
= 8.0 mA, V
= 8.0 mA, V
= 8.0 mA, V
= 8.0 mA, V
= 8.0 mA, V
= 0.5 V, I
= 15 V, I
= 15 V, T
= 10 V, I
= 0, I
Test Conditions
E
= 0, f = 1.0 MHz
C
E
B
E
C
A
E
= 0
CE
CB
= 0
= 0
= 0
= 150 C
CE
CE
CE
= 0, f = 1.0 MHz
= 0, f = 140 MHz
= 10 V
= 10 V,
= 10 V,
= 10 V,
= 10 V,
Min
2.0
600
8.0
15
30
20
14
20
NPN RF Amplifier
Max
1500
0.05
200
250
5.0
2.0
1.7
3.0
26
25
(continued)
Units
MHz
nA
dB
pF
pF
pF
pS
V
V
V
A