NE68819-T1 CEL, NE68819-T1 Datasheet - Page 16

• Manufacturer Part Number: NE68819-T1
• Description: TRANS NPN 2GHZ SMD
• Manufacturer: CEL

Specifications of NE68819-T1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.5dB @ 2GHz
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 3mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gain: -
• Other names: 2SC5195; NE68819-T1TR; NE68819-TR; NE68819TR

BJT NONLINEAR MODEL PARAMETERS
NE68833 NONLINEAR MODEL
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
ISE
ISC
IRB
VJC
IKF
BR
NR
IKR
NC
RE
RB
RC
BF
NF
NE
IS
0.796e-12
0.549e-12
3.8e-16
3.8e-15
3.5e-16
135.7
0.001
1.49
12.3
0.06
6.14
0.71
0.38
0.65
1.62
Q1
0.6
1.1
3.5
0.4
3.5
4.2
28
1
Parameters
Base
XCJC
MJC
MJS
CJS
VJS
PTF
XTB
XTF
VTF
FC
EG
TF
ITF
XTI
KF
TR
AF
C
L
BEPKG
BX
1.5e-14
11e-12
32e-12
0.48
0.56
0.75
0.75
0.36
0.65
0.61
1.22
L
1.11
Q1
50
B
0
0
0
3
C
(1)
C
CBPKG
CB
Emitter
L
L
E
EX
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
C
UNITS
CE
Parameter
time
capacitance
inductance
resistance
voltage
current
C
Q1
CEPKG
Parameters
C
C
L
L
C
C
C
L
L
L
L
B
E
BX
CX
EX
CX
CB
CE
CBPKG
CEPKG
BEPKG
0.05 to 5.0 GHz
V
8/03
CE
= 1 V to 5 V, I
Collector
C
= 1 mA to 10 mA
0.24e-12
0.27e-12
0.77e-9
0.95e-9
0.15e-12
0.1e-12
0.1e-12
0.3e-9
0.4e-9
0.3e-9
68833
seconds
farads
henries
ohms
volts
amps
Units