UPA806T-T1 CEL, UPA806T-T1 Datasheet

TRANS NPN HF FT=12GHZ SOT-363

UPA806T-T1

Manufacturer Part Number
UPA806T-T1
Description
TRANS NPN HF FT=12GHZ SOT-363
Manufacturer
CEL
Datasheet

Specifications of UPA806T-T1

Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gain
-
Other names
UPA806T-T1TR
UPA806T-TR
UPA806TTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPA806T-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
FEATURES
DESCRIPTION
NEC's UPA806T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
various hand-held wireless applications.
• SMALL PACKAGE STYLE:
• LOW NOISE FIGURE:
• HIGH GAIN:
• HIGH GAIN BANDWIDTH: f
• EXCELLENT LOW VOLTAGE, LOW CURRENT
SYMBOLS
T
h
, low voltage bias and small size make this device suited for
FE1
|S
2 NE685 Die in a 2 mm x 1.25 mm package
NF = 1.5 dB TYP at 2 GHz
|S
PERFORMANCE
Cre
I
I
h
CBO
EBO
NF
21E
FE 1
f
/h
21E
T
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA806T-T1, 3K per reel.
2
FE2
|
2
|
2
= 8.5 dB TYP at 2 GHz
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain at V
Gain Bandwidth at V
Feedback Capacitance at V
Insertion Power Gain at V
Noise Figure at V
h
FE
Ratio:
PARAMETERS AND CONDITIONS
h
h
FE1
FE2
PACKAGE OUTLINE
= Smaller Value of Q
= Larger Value of Q
CE
PART NUMBER
= 3 V, I
CE
T
= 12 GHz
= 3 V, I
CE
CE
EB
CB
C
CB
= 3 V, I
= 3 mA, f = 2 GHz
= 1 V, I
= 3 V, I
FREQUENCY TRANSISTOR
C
= 3 V, I
= 5 V, I
= 10 mA, f = 2 GHz
1
C
C
C
1
or Q
, or Q
= 10 mA, f = 2 GHz
E
= 10 mA
E
= 0
= 0, f = 1 MHz
(T
= 0
2
A
2
= 25°C)
NPN SILICON HIGH
UNITS
GHz
µA
µA
dB
pF
dB
2.0 ± 0.2
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
OUTLINE DIMENSIONS
0.9 ± 0.1
1.3
0.7
0.65
California Eastern Laboratories
0.85
MIN
75
7
3
2
1
PACKAGE OUTLINE S06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
UPA806T
TYP
S06
100
0.4
8.5
1.5
12
(Units in mm)
UPA806T
6
5
4
0.2 (All Leads)
0.15
MAX
150
0.1
0.1
0.7
2.5
+0.10
- 0.05

Related parts for UPA806T-T1

UPA806T-T1 Summary of contents

Page 1

... FE2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA806T-T1, 3K per reel. NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS 2.0 ± ...

Page 2

... GHz 0 Collector Current, lc (mA) Q1 NOISE FIGURE vs. COLLECTOR CURRENT 0 Collector Current, lc (mA) ORDERING INFORMATION 25°C) A UNITS RATINGS PART NUMBER V 9 UPA806T-T1 110 mW 200 150 °C -65 to +150 ° GHz 20 50 QUANTITY PACKAGING 3000 Tape & Reel COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 500 µA 50 400 µ ...

Page 3

TYPICAL PERFORMANCE CURVES GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 0 Collector Current, lc (mA) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 elements in total 200 Q1 ...

Page 4

... UPA806T(Q2 FREQUENCY S 11 (GHz) MAG ANG 0.50 0.899 -34.10 0.60 0.856 -41.10 0.80 0.783 -54.00 1.00 0.717 -65.70 1 ...

Page 5

... UPA806T MAG ANG 0.710 -34.60 0.533 0.664 -36.80 0.617 0.587 -40.90 0.744 0.529 -44.70 0.837 0.485 -48.20 0.901 0.451 -51 ...

Page 6

... UPA806T(Q2 FREQUENCY S 11 (GHz) MAG ANG 0.50 0.348 -77.00 0.60 0.297 -82.40 0.80 0.218 -95.00 1.00 0.165 -110.00 1 ...

Page 7

... UPA806T MAG ANG 0.589 -35.80 0.744 0.554 -36.70 0.807 0.496 -38.80 0.898 0.453 -41.10 0.959 0.421 -43.70 0.999 0.398 -46 ...

Page 8

... RC 10 CJE 0.4e-12 VJE 0.81 MJE 0.5 CJC 0.18e-12 VJC 0.75 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UNITS (1) Parameter Q1 & Q2 time capacitance 0.34 inductance 0 resistance 0 voltage 0.75 ...

Page 9

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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