UPA814T-T1-A CEL, UPA814T-T1-A Datasheet - Page 2

• Manufacturer Part Number: UPA814T-T1-A
• Description: TRANSISTOR NPN FT=9GHZ SOT-36
• Manufacturer: CEL

Specifications of UPA814T-T1-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB @ 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 3mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 80
• Dc Current Gain Hfe Max: 160
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.11 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
UPA814T
200
100
10
30
20
10
5
0
0
0
COLLECTOR TO EMITTER VOLTAGE
V
Collector to Emitter Voltage, V
GAIN BANDWIDTH PRODUCT vs.
f= 2 GHz
TOTAL POWER DISSIPATION vs.
CE
Ambient Temperature, T
= 1 V
1
COLLECTOR CURRENT vs.
1
AMBIENT TEMPERATURE
COLLECTOR CURRENT
Collector Current, I
2
50
2
3
3
4
100
C
(mA)
5
A
5
l
B
(°C)
= 20 µA
200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
CE
80 µA
60 µA
40 µA
Free Air
7
6
(V)
150
10
(T
A
= 25°C)
0.05
0.02
0.01
100
200
100
0.5
0.2
0.1
50
20
10
10
5
2
1
0
5
0
0
0.1 0.2
V
V
CE
V
CE
f= 2 GHz
CE
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
= 1 V
INSERTION POWER GAIN vs.
= 1 V
= 1 V
1
COLLECTOR CURRENT vs.
COLLECTOR CURRENT
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
DC CURRENT GAIN vs.
0.5
1
2
2
0.5
3
5
10
C
C
(mA)
(mA)
5
20
BE
(V)
7
50
100
10
1