NE68833-A CEL, NE68833-A Datasheet

TRANS NPN 2GHZ SOT-23

NE68833-A

Manufacturer Part Number
NE68833-A
Description
TRANS NPN 2GHZ SOT-23
Manufacturer
CEL
Datasheet
1.NE68819-T1-A.pdf (20 pages)

Specifications of NE68833-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
4.5GHz
Noise Figure (db Typ @ F)
1.7dB ~ 2.5dB @ 2GHz
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 3mA, 1V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-23
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
6 V
Continuous Collector Current
0.1 A
Power Dissipation
0.2 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
FEATURES
NEC's NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
age styles, and in chip form.
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
DESCRIPTION
• LOW PHASE NOISE DISTORTION
• LOW NOISE: 1.5 dB at 2.0 GHz
• LOW VOLTAGE OPERATION
• LARGE ABSOLUTE MAXIMUM COLLECTOR
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
• ALSO AVAILABLE IN CHIP FORM
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
R
R
|S
|S
NF
NF
CURRENT: I
MOUNT PACKAGE STYLES
C
I
TH(J-A)
TH(J-C)
I
h
CBO
EBO
P
21E
21E
f
f
RE 4
FE
T
T
MIN
MIN
T
|
|
2
2
Gain Bandwidth Product at
V
Gain Bandwidth Product at
V
Minimum Noise Figure at
V
Minimum Noise Figure at
V
Insertion Power Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance at
V
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance(Junction to Case) °C/W
CE
CE
CE
CE
CE
CE
CE
CB
EIAJ
CB
EB
= 1V, I
= 3V, I
= 1 V, I
= 3 V, I
= 1V, I
= 3V, I
= 1 V, I
= 1 V, I
C
MAX = 100 mA
= 1 V, I
= 5 V, I
PACKAGE OUTLINE
2
REGISTERED NUMBER
PART NUMBER
C
C
C
C
C
C
C
E
= 3 mA, f = 2.0 GHz
= 20 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 20 mA, f = 2.0 GHz
= 0 mA, f = 1 MHz
= 3 mA, f = 2.0 GHz
= 7 mA, f = 2.0 GHz
= 3 mA
C
E
= 0 mA
= 0 mA
HIGH FREQUENCY TRANSISTOR
SURFACE MOUNT NPN SILICON
3
at
1
°C/W
GHz
GHz
mW
dB
dB
dB
dB
nA
nA
pF
(T
A
= 25°C)
3.0 4.0
80
4
NE68818
2SC5194
0.65 0.8
1.7
1.5
8.5
18
10
5
160
100
100
150
833
2.5
4.5
3.0
80
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
NE68819
2SC5195
18 (SOT 343 STYLE)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
9.5
1.7
1.5
4.0
0.7
19
5
8
1000
160
100
100
125
2.5
0.8
California Eastern Laboratories
2.5
80
4
NE68830
2SC5193
0.75 0.85
4.5
1.7
1.5
3.5
6.5
30
9
160
100
100
150
833
2.5
19 (3 PIN ULTRA SUPER
39R (SOT 143R STYLE)
33 (SOT 23 STYLE)
2.5
80
4
NE68833
2SC5191
NE688
SERIES
0.75 0.85
4.5
8.5
1.7
1.5
3.5
6.5
MINI MOLD)
33
160
100
100
200
625
2.5
NE68839/39R
2SC5192/92R
4.0
80
4
0.65 0.8
4.5
1.7
1.5
4.5
39
9
9
160
100
100
200
625
2.5

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NE68833-A Summary of contents

Page 1

... Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern Laboratories NE688 SERIES 19 (3 PIN ULTRA SUPER MINI MOLD) 33 (SOT 23 STYLE) 39R (SOT 143R STYLE) NE68830 NE68833 NE68839/39R 2SC5193 2SC5191 2SC5192/92R 4.5 4 4.5 ...

Page 2

... Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES NE68818, NE68830 D.C. POWER DERATING CURVE 200 100 100 Ambient Temperature T NE68833, NE68839 D.C. POWER DERATING CURVE 200 100 100 Ambient Temperature 25°C) A UNITS RATINGS ...

Page 3

... Collector Current COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 Base to Emitter Voltage, V (TA = 25° 100 (mA) 20 100 50 (mA) 1 (V) BE NE68833 NOISE FIGURE vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C NE68839 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz ...

Page 4

NE688 SERIES TYPICAL SCATTERING PARAMETERS GHz 5 GHz . 1 0.1 GHz -.2 -.4 -2 -.6 -1.5 -.8 ...

Page 5

TYPICAL SCATTERING PARAMETERS NE68819 FREQUENCY S 11 GHz MAG ANG 0.1 0.538 -68.800 0.4 0.385 -146.900 0.8 0.358 -179.500 1.0 0.352 170.400 1.5 0.345 152.000 2.0 0.335 137.400 2.5 0.334 ...

Page 6

NE688 SERIES TYPICAL SCATTERING PARAMETERS GHz . GHz 1 0.1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68830 V = 0.5 ...

Page 7

TYPICAL SCATTERING PARAMETERS NE68830 FREQUENCY S 11 GHz MAG ANG 0.1 0.472 -66.200 0.4 0.313 -143.700 0.8 0.289 -171.000 1.0 0.285 -179.400 1.5 0.283 165.900 2.0 0.280 153.300 2.5 0.278 ...

Page 8

... TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -.8 -1 NE68833 FREQUENCY S 11 GHz MAG ANG 0.1 0.971 -15.100 0.4 0.877 -59.900 0.8 0.723 -105.400 1.0 0.683 -122.900 1.5 0.640 -158.100 2.0 0.644 174.400 2.5 0.669 151.300 3.0 0.682 131 ...

Page 9

... TYPICAL SCATTERING PARAMETERS NE68833 FREQUENCY S 11 GHz MAG ANG 0.1 0.738 -38.900 0.4 0.422 -108.100 0.8 0.317 -152.000 1.0 0.304 -166.400 1.5 0.302 168.000 2.0 0.317 148.300 2.5 0.342 133.600 3.0 0.358 121.600 4.0 0.406 101.800 5.0 0.471 83.500 0.1 ...

Page 10

NE688 SERIES TYPICAL SCATTERING PARAMETERS GHz . GHz 1 0.1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68839 V = 0.5 ...

Page 11

TYPICAL SCATTERING PARAMETERS NE68839 FREQUENCY S 11 GHz MAG ANG 0.1 0.840 -29.900 0.4 0.574 -94.600 0.8 0.440 -144.900 1.0 0.425 - 162.500 1.5 0.443 167.400 2.0 0.489 147.700 2.5 ...

Page 12

NE688 SERIES NE68800 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF ...

Page 13

NE68818 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 14

NE688 SERIES NE68819 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 ...

Page 15

NE68830 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 16

... NE68833 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR 3.5 ITF IKR 0.06 PTF ISC 3.5e- 1. 0.4 XTB RB 6.14 XTI RBM 3 ...

Page 17

NE68839 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 18

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 0.65 2.0 ± 0.2 0.60 0. +0.10 0.4 -0.05 0.3 0.9 ± 0 0.1 PACKAGE OUTLINE 19 1.6 ...

Page 19

... PART NUMBER QUANTITY NE68800 100 NE68818-T1-A 3000 NE68819-T1-A 3000 NE68830-T1-A 3000 NE68833-T1-A 3000 NE68839-T1-A 3000 NE68839R-T1 3000 Note: 1. Lead material: Cu Lead plating: PbSn Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ...

Page 20

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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