NE94430-T1-A CEL, NE94430-T1-A Datasheet - Page 2
![TRANS NPN OSC FT=2GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE94430-T1-A
Manufacturer Part Number
NE94430-T1-A
Description
TRANS NPN OSC FT=2GHZ SOT-323
Manufacturer
CEL
Datasheet
1.NE94430-T2.pdf
(8 pages)
Specifications of NE94430-T1-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
2GHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 5mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
6-1140-80069
Q2709394
Q2709394
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result in
TYPICAL PERFORMANCE CURVES
SYMBOLS
permanent damage.
V
V
V
T
CBO
CEO
T
EBO
I
STG
C
J
250
150
300
200
100
50
0
0.7
0.5
0.3
0.2
0.1
5
3
2
1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
NE94432, NE94433
NE94430
Storage Temperature
0.5 0.7
0
GAIN BANDWIDTH PRODUCT vs.
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
PARAMETERS
NE94433
Ambient Temperature, T
25
1
COLLECTOR CURRENT
Collector Current, I
FREE AIR
2
50
3
75
5
7 10
FREE AIR
100
C
(mA)
UNITS
A
mA
V
V
V
( C)
C
C
C
V
20
NE94430
125
CE
= -5 V
30
1
(T
-55 to +125
150
50
RATINGS
A
(T
= 25 C)
125
150
3.0
30
15
50
A
= 25 C)
200
100
50
20
10
0.7
0.2
92
0.5
0.3
0.1
3
2
1
0.5
1
TYPICAL DEVICE CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
1
COLLECTOR CURRENT
Collector Current, I
DC CURRENT GAIN vs.
2
3
5
5
7
10
C
10
(mA)
f = 1.0 MHz
V
CB
V
CE
CE
(V)
= 10 V
20
= 3 V
30
50