NE68830-A CEL, NE68830-A Datasheet - Page 12
![TRANS NPN 2GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE68830-A
Manufacturer Part Number
NE68830-A
Description
TRANS NPN 2GHZ SOT-323
Manufacturer
CEL
Datasheet
1.NE68819-T1-A.pdf
(20 pages)
Specifications of NE68830-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
4.5GHz
Noise Figure (db Typ @ F)
1.7dB ~ 2.5dB @ 2GHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 3mA, 1V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.1 A
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NE68800 NONLINEAR MODEL
BJT NONLINEAR MODEL PARAMETERS
NE688 SERIES
(1) Gummel-Poon Model
SCHEMATIC
Parameters
RBM
MJE
VAR
CJE
CJC
VJC
VAF
VJE
ISE
IKR
ISC
IRB
IKF
NR
NF
NE
BR
RE
RB
BF
NC
RC
IS
0.796e-12
0.549e-12
3.8e-15
3.5e-16
3.8e-16
135.7
0.001
1.49
12.3
0.06
6.14
0.71
0.38
0.65
1.62
Q1
0.6
1.1
3.5
0.4
3.5
4.2
28
1
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
EG
FC
TF
TR
KF
AF
0.032e-9
11.0e-12
0.48
0.56
0.75
0.75
0.36
0.65
0.61
1.11
Q1
50
0
0
0
3
0
1
L
B
C
(1)
CB
L
E
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
P1dB:
Date:
C
CE
Parameters
C
C
L
L
L
B
c
E
Parameter
time
capacitance
inductance
resistance
voltage
current
CB
CE
Q1
L
C
0.1 to 10.0 GHz
V
12.5 dBm at V
10/3/96
CE
= 1 V to 3 V, I
CE
= 3 V, Ic = 10 mA, 2 GHz
C
0.24e-12
0.27e-12
0.72e-9
0.51e-9
0.19e-9
ohms
amps
seconds
farads
henries
volts
= 1 mA to 10 mA
68800
Units