NE851M33-A CEL, NE851M33-A Datasheet - Page 3

• Manufacturer Part Number: NE851M33-A
• Description: TRANSISTOR NPN 2GHZ M33
• Manufacturer: CEL

Specifications of NE851M33-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 130mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M33
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 130 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS
Remark The graphs indicate nominal characteristics.
0.0001
0.001
0.01
100
250
200
150
100
0.1
130
50
10
60
50
40
30
20
10
1
0
0
0.4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
CE
1
0.5
Collector to Emitter Voltage V
25
= 1 V
Base to Emitter Voltage V
Ambient Temperature T
2
Mounted on Glass Epoxy PCB
(1.08 cm
0.6
50
400 A
3
µ
360 A
75
2
0.7
320 A
× 1.0 mm (t) )
µ
280 A
µ
4
240 A
µ
100
0.8
µ
A
(T
5
200 A
BE
(ºC)
A
CE
(V)
I
B
=+25ºC, unless otherwise specified)
125
µ
0.9
= 40 A
(V)
160 A
120 A
6
80 A
µ
µ
µ
µ
150
1.0
7
0.0001
0.001
0.01
100
1.0
0.8
0.6
0.4
0.2
0.1
10
0
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
0.5
= 2 V
Collector to Base Voltage V
Base to Emitter Voltage V
2
0.6
4
0.7
6
0.8
BE
CB
f = 1 MHz
(V)
8
(V)
0.9
1.0
10