MMBTH10LT1 ON Semiconductor, MMBTH10LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBTH10LT1
• Description: TRANS SS VHF NPN 25V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBTH10LT1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector (ic) (max): -
• Gain: -
• Noise Figure (db Typ @ F): -
• Other names: MMBTH10LT1OSCT

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Common−Base Feedback Capacitance
Collector Base Time Constant
(I
(I
(I
(V
(V
(I
(I
(I
(I
(V
(V
(I
C
C
E
C
C
C
C
C
CB
EB
CB
CB
= 4.0 mAdc, V
= 10 μAdc, I
= 4.0 mAdc, V
= 4.0 mAdc, I
= 4.0 mAdc, V
= 4.0 mAdc, V
= 1.0 mAdc, I
= 100 μAdc, I
= 10 Vdc, I
= 10 Vdc, I
= 25 Vdc, I
= 2.0 Vdc, I
C
E
E
E
B
C
B
E
CB
= 0)
CE
CE
CE
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 0)
= 0.4 mAdc)
= 0)
= 0)
= 0)
= 10 Vdc, f = 31.8 MHz)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc, f = 100 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
MMBTH10−4LT1
MMBTH10−4LT1
MMBTH10LT1
MMBTH10LT1
http://onsemi.com
2
V
V
V
Symbol
V
(BR)CEO
(BR)CBO
(BR)EBO
rb′C
I
CE(sat)
I
V
CBO
h
C
EBO
C
f
FE
BE
T
cb
rb
c
Min
120
650
800
3.0
25
30
60
−
−
−
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.95
0.65
100
100
240
0.5
0.7
9.0
−
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ps
−