MSD2714AT1G ON Semiconductor, MSD2714AT1G Datasheet

TRANS NPN VHF/UHF BIPO 25V SC-59

MSD2714AT1G

Manufacturer Part Number
MSD2714AT1G
Description
TRANS NPN VHF/UHF BIPO 25V SC-59
Manufacturer
ON Semiconductor
Datasheet

Specifications of MSD2714AT1G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 1mA, 6V
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector (ic) (max)
-
Gain
-
Noise Figure (db Typ @ F)
-
MSD2714AT1
VHF/UHF Transistor
NPN Silicon
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation FR−5 Board
T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
A
Pb−Free Package is Available
= 25°C
A
Characteristic
= 25°C
Rating
Preferred Device
Symbol
Symbol
(Note 1)
(Note 2)
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
qJA
qJA
D
D
stg
−55 to +150
Max
Max
225
556
300
625
3.0
1.8
2.4
25
30
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MSD2714AT1
MSD2714AT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
*Date Code orientation may vary depending
(Note: Microdot may be in either location)
upon manufacturing location
2
ORDERING INFORMATION
14A = Specific Device Code
M
G
BASE
MARKING DIAGRAM
http://onsemi.com
1
2
= Date Code*
=Pb−Free Package
3
(Pb−Free)
Package
14A M G
SC−59
SC−59
COLLECTOR
EMITTER
G
Publication Order Number:
3
1
CASE 318D
STYLE 1
SC−59
1
3000 / Tape & Reel
3000 / Tape & Reel
MSD2714AT1/D
Shipping

Related parts for MSD2714AT1G

MSD2714AT1G Summary of contents

Page 1

... −55 to +150 J stg MSD2714AT1 MSD2714AT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi ...

Page 2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 1.0 mAdc Collector −Base Breakdown Voltage = 10 mAdc Emitter −Base ...

Page 3

FREQUENCY (MHz) Figure 3. Rectangular Form COMMON−BASE y PARAMETERS versus FREQUENCY ( 5.0 4.0 3.0 −b rb ...

Page 4

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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