25TTS08FP Vishay, 25TTS08FP Datasheet - Page 5

• Manufacturer Part Number: 25TTS08FP
• Description: SCR PHASE CONT 800V 25A TO-220FP
• Manufacturer: Vishay

Specifications of 25TTS08FP

• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 2V
• Voltage - On State (vtm) (max): 1.25V
• Current - On State (it (av)) (max): 16A
• Current - On State (it (rms)) (max): 25A
• Current - Gate Trigger (igt) (max): 45mA
• Current - Hold (ih) (max): 100mA
• Current - Off State (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 300A @ 50Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Current - On State (it (rms) (max): 25A
• Breakover Current Ibo Max: 350 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.25 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 45 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Peak Repetitive Off-state Voltage, Vdrm: 800V
• Gate Trigger Current Max, Igt: 45mA
• Current It Av: 16A
• On State Rms Current It(rms): 25A
• Peak Non Rep Surge Current Itsm 50hz: 300A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *25TTS08FP; VS-25TTS08FP; VS-25TTS08FP; VS25TTS08FP; VS25TTS08FP

Document Number: 94384
Revision: 27-May-08
100
0.01
0.1
10
0.1
10
0.001
0.0001
1
1
a)Recommended load line for
b)Rec ommended load line for
Rectangular gate pulse
VGD
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated d i/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
IGD
For technical questions, contact: [e-mail]
0.01
0.001
TO-220AB FULL-PAK, 25 A
1000
Fig. 8 - Thermal Impedance Z
100
Fig. 7 - On-State Voltage Drop Characteristics
10
S ingle Pulse
1
Phase Control SCR
0
Ins tanta neous On-state Voltage (V)
S quare Wave Pulse Duration (s)
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
25T T S .. S eries
1
0.1
0.01
(b)
25TTS...FPPbF High Voltage Series
2
(a)
T = 25°C
T = 125°C
J
J
25T T S .. S eries
3
thJC
0.1
1
F requenc y Limited by PG(AV)
Characteristics
4
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
25T T S .. S eries
Vishay High Power Products
S teady S tate Value
(DC Operation)
(4)
5
10
(3)
1
(2)
(1)
100
10
www.vishay.com
5