X00619MA5AL2 STMicroelectronics, X00619MA5AL2 Datasheet - Page 4

• Manufacturer Part Number: X00619MA5AL2
• Description: SCR 0.8A 600V TO-92
• Manufacturer: STMicroelectronics

Specifications of X00619MA5AL2

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.35V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 1µA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current - On State (it (rms) (max): 800mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9067-2

Characteristics
4/7
Figure 5.
Figure 7.
Figure 9.
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100.0
10.0
1.0
0.1
-40 -30 -20 -10
1.0E-01
10
I
9
8
7
6
5
4
3
2
1
0
GT H L
dV/dt[R
1
I
TSM
,I ,I [T ] /
(A)
GK
j
Repetitive
Relative variation of gate trigger,
holding and latching current vs.
junction temperature
Relative variatiohn of dV/dt
immunity vs. gate-cathode
resistance (typical values)
Surge peak on-state current vs.
number of cycles
T =25°C
C
] / dV/dt[
I
0
GT H L
10
,I ,I [T =25°C]
10
20
Non repetitive
T initial=25°C
R
j
Number of cycles
GK
30
j
=1k ]
T (°C)
R
1.0E+00
40
j
GK
50
(k )
60
100
I
70
GT
Typical values
I
H
& I
80
L
90 100 110 120 130
V = 0.67 x V
t =10ms
p
D
One cycle
Doc ID 15755 Rev 1
DRM
1000
1.0E+01
Figure 6.
Figure 8.
Figure 10. Non repetitive surge peak on state
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1.E-02
1
1.E+02
1.E+01
1.E+00
1
1.E-01
I [R
dV/dt[C
H
0.01
GK
I
TSM
] / I [
GK
(A), I t (A s)
H
] / dV/dt[
Relative variation of holding
current vs. gate-cathode resistance
(typical values)
Relative variation of dV/dt immunity
vs. gate-cathode capacitance
(typical values)
current for a sinusoidal pulse and
corresponding value of I
1.E-01
R
GK
2
=1k ]
2
R
0.10
GK
=1k ]
R
C
1.E+00
GK
t (ms)
p
GK
I
(k )
TSM
(nF)
1.00
1.E+01
I t
2
V = 0.67 x V
D
2
T initial = 25°C
R
j
T
GK
= 1k
X00619
DRM
10.00
1.E+02
10