XL0840 STMicroelectronics, XL0840 Datasheet - Page 3

• Manufacturer Part Number: XL0840
• Description: SCR 0.8A 400V TO-92-3
• Manufacturer: STMicroelectronics

Specifications of XL0840

• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.95V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 1µA
• Current - Non Rep. Surge 50, 60hz (itsm): 7A, 8A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 8 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 1 uA
• Forward Voltage Drop: 1.95 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 8 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7046

Fig. 1: Maximum average power dissipation ver-
sus average on-state current.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 2-2: Average and D.C. on-state current ver-
sus ambient temperature (device mounted on FR4
with recommended pad layout).
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.00
-40 -30 -20 -10
0
IT(av)(A)
P(W)
IGT, IH, IL[Tj] / IGT, IH, IL [Tj=25°C]
=180°
(Rgk=1kW)
IH & IL
0.05
=180°
IGT
0.10
25
D.C.
0
0.15
10 20 30 40 50 60 70 80 90 100 110 120 130
0.20
50
Tamb(°C)
IT(av)(A)
Tj(°C)
0.25
0.30
75
0.35
0.40
100
0.45
180°
0.50
125
Fig. 2-1: Average and D.C. on-state current ver-
sus lead temperature.
Fig. 5: Relative variation of holding current versus
gate-cathode resistance (typical values).
11
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1.E+00
1.E-01
1.E-02
9
8
7
6
5
4
3
2
1
0
0.01
IH [Rgk] / IH [Rgk=1k ]
0
IT(av)(A)
1.E-02
K=[Zth(j-a)/Rth(j-a)]
D.C.
=180°
25
1.E-01
0.10
1.E+00
50
Rgk(k )
Tlead(°C)
tp(s)
1.E+01
75
1.00
1.E+02
100
XL0840
Tj=25°C
1.E+03
10.00
3/5
125