TXN612RG STMicroelectronics, TXN612RG Datasheet - Page 2

• Manufacturer Part Number: TXN612RG
• Description: SCR STD 600V 12A 15MA TO-220AB
• Manufacturer: STMicroelectronics

Specifications of TXN612RG

• Scr Type: Standard Recovery
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 8A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 30mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 125A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Current - On State (it (rms) (max): 12A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3561-5

GATE CHARACTERISTICS (maximum values)
P G (AV) = 1W
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXN/TYN 0512 ---> TXN/TYN 1012
2/5
Rth (j-c) DC Junction to case for DC
Symbol
Symbol
Rth (j-a)
I DRM
I RRM
dV/dt
V GT
V GD
V TM
I GT
tgt
I H
I L
tq
V D =12V
V D =12V
V D =V DRM R L =3.3k
V D =V DRM I G = 40mA
dI G /dt = 0.5A/ s
I G = 1.2 I GT
I T = 100mA
ITM= 24A tp= 380 s
V DRM Rated
V RRM Rated
Linear slope up to V D =67%V DRM
gate open
V D =67%V DRM
dI TM /dt=30 A/ s
Junction to ambient
P GM = 10W (tp = 20 s)
(DC) R L =33
(DC) R L =33
gate open
I TM = 24A
dV D /dt= 50V/ s
Test Conditions
Parameter
I FGM = 4A (tp = 20 s)
V R = 25V
Tj= 125 C
Tj= 125 C
Tj= 125 C
Tj= 125 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
V RGM = 5 V.
TXN
TYN
MAX
MAX
MAX
MAX
MAX
TYP
TYP
TYP
MIN
MIN
Value
Value
0.01
200
1.5
0.2
1.6
3.5
2.5
15
50
30
70
60
2
3
V/ s
Unit
Unit
mA
mA
mA
mA
C/W
C/W
V
V
V
s
s