2N5061RLRAG ON Semiconductor, 2N5061RLRAG Datasheet - Page 2
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2N5061RLRAG
Manufacturer Part Number
2N5061RLRAG
Description
THYRISTOR SCR 0.8A 60V TO92
Manufacturer
ON Semiconductor
Datasheet
1.2N5064RLRAG.pdf
(7 pages)
Specifications of 2N5061RLRAG
Scr Type
Sensitive Gate
Voltage - Off State
60V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
510mA
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
10A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current - On State (it (rms) (max)
800mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N5061RLRAGOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5061RLRAG
Manufacturer:
ON
Quantity:
16 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
*Indicates JEDEC Registered Data.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Peak Repetitive Off−State Voltage (Note 1)
On-State Current RMS (180° Conduction Angles; T
*Average On-State Current
*Peak Non-repetitive Surge Current,
Circuit Fusing Considerations (t = 8.3 ms)
*Average On-State Current
*Forward Peak Gate Power (Pulse Width v 1.0 msec; T
*Forward Average Gate Power (T
*Forward Peak Gate Current (Pulse Width v 1.0 msec; T
*Reverse Peak Gate Voltage (Pulse Width v 1.0 msec; T
*Operating Junction Temperature Range
*Storage Temperature Range
*Thermal Resistance, Junction−to−Case (Note 2)
Thermal Resistance, Junction−to−Ambient
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
curved surface.
(T
50 to 60 Hz, R
(180° Conduction Angles)
(T
(T
T
(1/2 cycle, Sine Wave, 60 Hz)
(180° Conduction Angles)
(T
(T
DRM
A
J
C
C
C
C
= 25°C
= *40 to 110°C, Sine Wave,
= 67°C)
= 102°C)
= 67°C)
= 102°C)
and V
RRM
GK
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
= 1 kW)
(T
J
= 25°C unless otherwise noted)
A
= 25°C, t = 8.3 ms)
Characteristic
2N5060
2N5061
2N5062
2N5064
Rating
C
= 80°C)
A
A
http://onsemi.com
A
= 25°C)
= 25°C)
= 25°C)
2
Symbol
Symbol
I
V
P
V
T(RMS)
V
I
I
R
I
R
P
T(AV)
T(AV)
I
T
DRM,
TSM
G(AV)
RRM
RGM
I
GM
T
qJC
qJA
GM
stg
2
J
t
−40 to +150
−40 to +110
Value
0.255
0.255
0.51
0.51
0.01
Max
100
200
200
0.8
0.4
0.1
1.0
5.0
30
60
10
75
°C/W
°C/W
Unit
Unit
A
°C
°C
W
W
V
A
A
A
A
A
V
2
s