TS1220-600T STMicroelectronics, TS1220-600T Datasheet - Page 4
TS1220-600T
Manufacturer Part Number
TS1220-600T
Description
SCR 12A 600V TO-220AB
Manufacturer
STMicroelectronics
Datasheet
1.TYN812RG.pdf
(12 pages)
Specifications of TS1220-600T
Scr Type
Sensitive Gate
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.6V
Current - On State (it (av)) (max)
8A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
5µA
Current - Non Rep. Surge 50, 60hz (itsm)
110A, 115A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current - On State (it (rms) (max)
12A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10311-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Characteristics
4/12
Figure 3.
Figure 5.
Figure 7.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.00
0.10
0.01
-40
1E-2
I
0
I
GT H L
T(AV)
K=[Z
,I ,I [T ] /
-20
(A)
= 180°
th(j-a)
I
GT
Average and D.C. on-state current
versus ambient temperature
(device mounted on FR4 with
recommended pad layout) (DPAK)
Relative variation of thermal
impedance junction to ambient
versus pulse duration
(recommended pad layout, FR4 PC
board for DPAK)
Relative variation of gate trigger
current and holding current versus
junction temperature for TN12 and
TYNx12 series
j
25
/R
1E-1
DPAK
0
I
th(j-a)
GT H L
,I ,I [T =25°C]
D PAK
D.C.
2
20
]
50
1E+0
j
D PAK
T
40
2
T (°C)
amb
t (s)
j
p
DPAK
(°C)
60
75
1E+1
TO-220AB / IPAK
80
100
100
I
H
1E+2
& I
L
120
5E+2
125
140
Figure 4.
Figure 6.
Figure 8.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.5
0.2
0.1
1E-2
1E-3
-40
I [R
I
K=[Z
H
GT H L
,I ,I [T ] /
GK
th(j-c)
-20
] / I [
H
Relative variation of thermal
impedance junction to case versus
pulse duration
Relative variation of gate trigger
current and holding current versus
junction temperature for TS12
series
Relative variation of holding
current versus gate-cathode
resistance (typical values) for TS12
series
j
/R
I
GT
R
th(j-c)
0
I
GK
GT H L
=1k ]
,I ,I [T =25°C]
1E-1
1E-2
TN12, TS12 and TYNx12 Series
]
20
j
R
40
T (°C)
GK
t (s)
j
p
(k )
60
1E+0
1E-1
80
R
GK
I
H
& I
= 1k
100
L
T
j
= 25°C
120
1E+0
1E+1
140