10RIA120 Vishay, 10RIA120 Datasheet - Page 3

• Manufacturer Part Number: 10RIA120
• Description: SCR 1200V 10A TO-48
• Manufacturer: Vishay

Specifications of 10RIA120

• Scr Type: Standard Recovery
• Voltage - Off State: 1200V
• Voltage - Gate Trigger (vgt) (max): 2V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 10A
• Current - On State (it (rms)) (max): 25A
• Current - Gate Trigger (igt) (max): 60mA
• Current - Hold (ih) (max): 130mA
• Current - Off State (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 225A, 240A
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-208AA, TO-48
• Current - On State (it (rms) (max): 25A
• Breakover Current Ibo Max: 240 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 10 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 130 mA
• Mounting Style: Stud
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *10RIA120; VS-10RIA120; VS-10RIA120; VS10RIA120; VS10RIA120

Note
• t
Note
(1)
Document Number: 93689
Revision: 06-Jun-08
SWITCHING
PARAMETER
Maximum rate of rise
of turned-on current
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
q
Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 10RIA120S90
= 10 µs up to 600 V, t
q
= 30 µs up to 1600 V available on special request
V
V
V
V
DRM
DRM
DRM
DRM
≤ 1000 V
≤ 1600 V
≤ 600 V
≤ 800 V
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
P
dV/dt
-V
P
V
V
dI/dt
G(AV)
I
I
I
GM
GT
GD
t
GM
GD
t
t
GT
GM
gt
rr
q
Medium Power Thyristors
(Stud Version), 10 A
T
T
T
T
T
T
T
T
T
T
T
V
T
T
T
Gate pulse = 20 V, 15 Ω, t
I
T
at rated V
T
I
T
dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V
gate bias 0 V to 100 W
TM
TM
J
J
J
J
J
J
J
J
J
J
J
J
J
DRM
J
J
J
J
= T
= T
= T
= - 65 °C
= 25 °C
= 125 °C
= - 65 °C
= 25 °C
= 125 °C
= T
= T
= T
= T
= T
= 25 °C,
= T
= T
= (2 x rated dI/dt) A
= I
= Rated value
J
J
J
J
J
J
J
J
J
T(AV)
J
maximum linear to 100 % rated V
maximum linear to 67 % rated V
maximum, V
maximum,
maximum
maximum
maximum
maximum, V
maximum,
maximum, I
DRM
, t
p
/V
> 200 µs, dI/dt = - 10 A/µs
RRM
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
TM
, T
DRM
DM
J
= I
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
= Rated V
= 125 °C
= Rated value
T(AV)
p
= 6 µs, t
, t
p
Vishay High Power Products
> 200 µs, V
DRM
r
= 0.1 µs maximum
DRM
DRM
DRM
anode to
R
= 100 V,
DRM
,
10RIA Series
VALUES
VALUES
VALUES
300
200
180
160
150
110
100
0.9
8.0
2.0
1.5
3.0
2.0
1.0
2.0
0.2
10
90
60
35
4
(1)
www.vishay.com
UNITS
UNITS
UNITS
A/µs
V/µs
mA
mA
µs
W
A
V
V
V
3