ST180S16P0 Vishay, ST180S16P0 Datasheet - Page 2

• Manufacturer Part Number: ST180S16P0
• Description: SCR PHASE CONT 1600V 200A TO-93
• Manufacturer: Vishay

Specifications of ST180S16P0

• Scr Type: Standard Recovery
• Voltage - Off State: 1600V
• Voltage - Gate Trigger (vgt) (max): 3V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 200A
• Current - On State (it (rms)) (max): 314A
• Current - Gate Trigger (igt) (max): 150mA
• Current - Hold (ih) (max): 600mA
• Current - Off State (max): 30mA
• Current - Non Rep. Surge 50, 60hz (itsm): 5000A, 5230A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-209AB, TO-93
• Current - On State (it (rms) (max): 314A
• Breakover Current Ibo Max: 5230 A
• Rated Repetitive Off-state Voltage Vdrm: 1600 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Peak Repetitive Off-state Voltage, Vdrm: 1.6kV
• Gate Trigger Current Max, Igt: 150mA
• Current It Av: 200A
• On State Rms Current It(rms): 314A
• Peak Non Rep Surge Current Itsm 50hz: 5kA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *ST180S16P0; VS-ST180S16P0; VS-ST180S16P0; VSST180S16P0; VSST180S16P0

ST180S Series
Bulletin I25165 rev. C 03/03
On-state Conduction
Switching
2
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
I
I
I
I
V
V
r
r
V
I
I
t
t
di/dt
H
L
d
q
ST180S
T(AV)
T(RMS)
TSM
2
2
t1
t2
Type number
T(TO)1
T(TO)
TM
t
t
2
Parameter
Parameter
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Max. (typical) latching current
Typical delay time
Typical turn-off time
Max. non-repetitive rate of rise
of turned-on current
Voltage
2
2
Code
t for fusing
04
08
12
16
20
t for fusing
V
peak and off-state voltage
DRM
/V
RRM
1200
1600
2000
, max. repetitive
400
800
1000 (300)
V
ST180S
ST180S
1000
5000
5230
4200
4400
1250
1.14
1.75
125
1.08
1.14
1.18
200
314
114
600
100
1.0
85
88
81
KA
Units Conditions
KA
Units Conditions
A/µs
m
mA
°C
µs
A
A
V
A
V
2
2
s
s
Gate drive 20V, 20 , t
T
Gate current 1A, di
V
I
dv/dt = 20V/µs, Gate 0V 100
t = 10ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 8.3ms
(16.7% x
(I >
180° conduction, half sine wave
DC @ 76°C case temperature
t = 8.3ms
t = 10ms
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
(I >
I
T
TM
pk
J
d
J
repetitive peak voltage
= T
V
= 570A, T
= T
= 0.67% V
= 300A, T
RSM
x I
x I
J
J
max, anode voltage
max, anode supply 12V resistive load
T(AV)
T(AV)
, maximum non-
x I
x I
),T
1300
1700
2100
),T
J
No voltage
100% V
reapplied
No voltage
reapplied
100% V
500
900
reapplied
reapplied
J
DRM
T(AV)
V
T(AV)
= 125°C, t
= T
J
J
= T
= T
, T
J
< I <
< I <
g
max, di/dt = 20A/µs, V
J
J
J
/dt = 1A/µs
RRM
RRM
= 25°C
max.
max.
r
p
x I
x I
1µs
= 10ms sine pulse
T(AV)
T(AV)
Sinusoidal half wave,
Initial T
80% V
), T
t
), T
p
= 500µs
J
I
J
J
DRM
DRM
= T
@ T
= T
= T
www.irf.com
J
J
J
/I
J
max.
max.
max.
RRM
30
R
mA
= T
= 50V
J
max.
max