ST333S04PFL0 Vishay, ST333S04PFL0 Datasheet - Page 3

• Manufacturer Part Number: ST333S04PFL0
• Description: SCR PHASE CONT 400V 330A TO-118
• Manufacturer: Vishay

Specifications of ST333S04PFL0

• Scr Type: Standard Recovery
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 3V
• Voltage - On State (vtm) (max): 1.96V
• Current - On State (it (av)) (max): 330A
• Current - On State (it (rms)) (max): 518A
• Current - Gate Trigger (igt) (max): 200mA
• Current - Hold (ih) (max): 600mA
• Current - Off State (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 11000A, 11500A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AE, TO-118
• Current - On State (it (rms) (max): 518A
• Breakover Current Ibo Max: 11520 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.96 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Peak Repetitive Off-state Voltage, Vdrm: 400V
• Gate Trigger Current Max, Igt: 200mA
• Current It Av: 330A
• On State Rms Current It(rms): 518A
• Peak Non Rep Surge Current Itsm 50hz: 11kA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *ST333S04PFL0; VS-ST333S04PFL0; VS-ST333S04PFL0; VSST333S04PFL0; VSST333S04PFL0

Note
• The table above shows the increment of thermal resistance R
Document Number: 94409
Revision: 11-Aug-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
For technical questions, contact: [e-mail]
0.011
0.013
0.017
0.025
0.041
Phase Control Thyristors
SYMBOL
(Stud Version), 330 A
P
+ V
- V
P
V
V
I
G(AV)
I
I
GM
GT
GD
GM
GD
GT
GM
GM
SYMBOL
R
R
T
thC-hs
T
thJC
Stg
J
thJC
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
RECTANGULAR CONDUCTION
when devices operate at different conduction angles than DC
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
J
J
J
J
J
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
See dimension - link at the end of datasheet
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, t
maximum
TEST CONDITIONS
0.008
0.014
0.018
0.026
0.042
TEST CONDITIONS
p
p
p
≤ 5 ms
≤ 5 ms
≤ 5 ms
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
Vishay High Power Products
DRM
ST330SPbF Series
TEST CONDITIONS
anode to
T
J
= T
J
maximum
TYP.
- 40 to 125
- 40 to 150
TO-209AE (TO-118)
200
100
2.5
1.8
1.1
50
VALUES
VALUES
(425)
0.10
0.03
48.5
535
10.0
0.25
2.0
3.0
5.0
20
10
www.vishay.com
MAX.
200
3
-
-
-
-
UNITS
(lbf · in)
K/W
UNITS
UNITS
N · m
K/W
mA
mA
°C
W
g
A
V
V
V
3