BT151S-650L,118 NXP Semiconductors, BT151S-650L,118 Datasheet - Page 8

• Manufacturer Part Number: BT151S-650L,118
• Description: THYRISTOR 500V 12A DPAK
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650L,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 5mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 12A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Breakover Current Ibo Max: 132 A
• On-state Rms Current (it Rms): 12 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.4 V
• Gate Trigger Current (igt): 2 mA
• Holding Current (ih Max): 20 mA
• Forward Voltage Drop: 1.4 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 650 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060605118; BT151S-650L /T3; BT151S-650L /T3

NXP Semiconductors
BT151S_SER_L_R_5
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H
3
2
1
0
junction temperature
50
0
50
100
001aaa950
T
j
( C)
150
Rev. 05 — 9 October 2006
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
D
10
10
10
/dt
BT151S series L and R
10
4
3
2
(1) R
(2) Gate open circuit
function of junction temperature; minimum
values
0
GK
= 100
(2)
(1)
50
100
© NXP B.V. 2006. All rights reserved.
T
j
001aaa949
( C)
150
Thyristors
8 of 13