BT151X-650R,127 NXP Semiconductors, BT151X-650R,127 Datasheet - Page 3

THYRISTOR 650V 12A SOT186A

BT151X-650R,127

Manufacturer Part Number
BT151X-650R,127
Description
THYRISTOR 650V 12A SOT186A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT151X-650R,127

Package / Case
TO-220-3 Full Pack
Scr Type
Standard Recovery
Voltage - Off State
650V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.75V
Current - On State (it (av)) (max)
7.5A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
15mA
Current - Hold (ih) (max)
20mA
Current - Off State (max)
500µA
Current - Non Rep. Surge 50, 60hz (itsm)
120A, 132A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Current - On State (it (rms) (max)
12A
Rated Repetitive Off-state Voltage Vdrm
650 V
Breakover Current Ibo Max
110 A
On-state Rms Current (it Rms)
12 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.4 V
Gate Trigger Current (igt)
2 mA
Holding Current (ih Max)
20 mA
Forward Voltage Drop
1.4 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Off-state Capacitance Co
10 pF
Repetitive Peak Forward Blocking Voltage
650 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934038060127
BT151X-650R
BT151X-650R
Philips Semiconductors
9397 750 13162
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
160
120
15
10
80
40
5
0
0
a = form factor = I
f = 50 Hz.
values.
0
1
T(RMS)
/I
T(AV)
.
2
10
4
Rev. 04 — 9 June 2004
4
2.8
10
2
2.2
conduction
(degrees)
angle
120
180
30
60
90
6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT151X series
factor
1.9
form
1.57
2.8
2.2
1.9
a
4
T
I
T
n
j
I
initial = 25 C max
T(AV)
t
p
(A)
001aaa961
001aaa957
I
1.57
TSM
a =
t
10
Thyristors
8
3
57.5
80
102.5
125
T
hs(max)
( C)
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