TS820-600H STMicroelectronics, TS820-600H Datasheet - Page 4
![SCR 8A 20MA 600V IPAK](/photos/5/24/52409/i-pak_sml.jpg)
TS820-600H
Manufacturer Part Number
TS820-600H
Description
SCR 8A 20MA 600V IPAK
Manufacturer
STMicroelectronics
Datasheet
1.TYN608RG.pdf
(12 pages)
Specifications of TS820-600H
Scr Type
Sensitive Gate
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.6V
Current - On State (it (av)) (max)
5A
Current - On State (it (rms)) (max)
8A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
5µA
Current - Non Rep. Surge 50, 60hz (itsm)
70A, 73A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Current - On State (it (rms) (max)
8A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Characteristics
4/12
Figure 3.
Figure 5.
Figure 7.
1.00
0.10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
-40
1E-2
I
0
I
GT H L
T(AV)
K=[Z
,I ,I [T ] /
I
Recommended pad layout,
FR4 printed circuit board
H
& I
-20
(A)
th(j-a)
L
I
GT
j
25
Average and DC on-state current
versus ambient temperature
(DPAK)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DPAK)
Relative variation of gate trigger
and holding current versus junction
temperature
= 180°
/R
1E-1
0
I
th(j-a)
GT H L
,I ,I [T =25°C]
D.C.
20
]
50
DPAK
1E+0
j
T
40
T (°C)
amb
t (s)
j
p
(°C)
TO-220AB / IPAK
60
Recommended pad layout,
FR4 printed circuit board
75
1E+1
80
TN8 and TYNx8
100
100
1E+2
Doc ID 7476 Rev 6
120
5E+2
125
140
TN805, TN815, TS820, TYN608, TYN808, TYN1008
Figure 4.
Figure 6.
Figure 8.
1.0
0.5
0.2
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
-40
1E-3
I [R
K=[Z
I
H
GT H L
TS8
,I ,I [T ] /
GK
th(j-c)
R
-20
GK
I
H
] / I [
& I
= 1k
I
GT
L
/R
H
j
Relative variation of thermal
impedance junction to case versus
pulse duration
Relative variation of gate trigger
current and holding current versus
junction temperature for TS820
Relative variation of holding
current versus gate-cathode
resistance (typical values)
R
th(j-c)
0
I
GK
GT H L
=1k ]
,I ,I [T =25°C]
]
1E-1
1E-2
20
j
R
40
T (°C)
GK
t (s)
j
p
(k )
60
1E+0
1E-1
80
100
T
j
= 25°C
120
1E+0
1E+1
140