CS19-08HO1C IXYS, CS19-08HO1C Datasheet
CS19-08HO1C
Manufacturer Part Number
CS19-08HO1C
Description
THYRISTOR PHASE 800V ISOPLUS220
Manufacturer
IXYS
Datasheet
1.CS19-08HO1C.pdf
(2 pages)
Specifications of CS19-08HO1C
Scr Type
Standard Recovery
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.65V
Current - On State (it (av)) (max)
13A
Current - On State (it (rms)) (max)
35A
Current - Gate Trigger (igt) (max)
25mA
Current - Hold (ih) (max)
50mA
Current - Off State (max)
1mA
Current - Non Rep. Surge 50, 60hz (itsm)
100A, 105A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Current - On State (it (rms) (max)
35A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Phase Control Thyristor
ISOPLUS220
Electrically Isolated Back Surface
Symbol
I
I
I
I
(di/dt)
(dv/dt)
P
P
V
T
T
T
V
T
F
Weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2003 IXYS All rights reserved
V
V
T(RMS)
T(AV)M
TSM
2
1200
t
stg
L
C
VJ
VJM
ISOL
GM
GAV
RGM
V
RSM
DSM
800
cr
cr
1200
V
V
800
RRM
DRM
V
T
T
T
V
T
V
T
V
T
V
T
f = 50 Hz, t
V
I
di
T
R
T
I
50/60 Hz RMS; I
1.6mm from case; 10s
Mounting force
G
T
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
Test Conditions
R
R
R
R
D
GK
G
= I
=0.08 A
/dt = 0.08 A/µs
= 85°C; 180° sine
= 0 V
= 0 V
= 0 V
= 0 V
= 2/3 V
= T
= 45°C;
= T
= 45°C
= T
= T
= T
= T
= ∞; method 1 (linear voltage rise)
T(AV)M
VJM
VJM
VJM
VJM
VJM
VJM
CS 19-12ho1C
Type
CS 19-08ho1C
;
DRM
P
=200 µs
TM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
non repetitive, I
V
t
t
P
P
ISOL
DR
=
=
= 2/3 V
≤
1 mA
ADVANCE TECHNICAL INFORMATION
30 µs
300 µs
T
DRM
= 20 A
T
= I
T(AV)M
11...65 / 2.4...11
-40...+125
-40...+125
Maximum Ratings
A
2500
100
105
100
500
500
125
260
2.5
0.5
35
13
85
90
50
45
36
33
10
5
2
N / lb
A/µs
A/µs
V/µs
G
A
A
A
A
V~
°C
°C
°C
°C
W
W
W
A
A
A
A
A
A
V
g
2
2
2
2
s
s
s
s
C
V
I
I
Features
Features
Applications
Advantages
T(AV)M
T(RMS)
ISOPLUS 220
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode-to-tab capacitance (15pF
Planar passivated chips
Epoxy meets UL 94V-0
High performance glass
passivated chip
Long-term stability of leakage
current and blocking voltage
RRM
Motor control
Power converter
AC power controller
Light and temperature control
SCR for inrush current limiting
in power supplies or AC drive
Space and weight savings
Simple mounting
typical)
G
D
S
= 800 - 1200 V
= 35 A
= 13 A
TM
Isolated back surface*
DS98789A(8/03)
CS 19
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CS19-08HO1C Summary of contents
Page 1
... T stg V 50/60 Hz RMS; I ≤ ISOL ISOL T 1.6mm from case; 10s L F Mounting force C Weight IXYS reserves the right to change limits, conditions and dimensions. © 2003 IXYS All rights reserved ADVANCE TECHNICAL INFORMATION A Maximum Ratings = T(AV)M DRM 30 µs 300 µs -40...+125 -40...+125 ...
Page 2
Symbol Test Conditions VJM R RRM 25° For power-loss calculations only ( ...