MCR100-4RLRMG ON Semiconductor, MCR100-4RLRMG Datasheet - Page 3
![THYRISTOR SCR 0.8A 200V TO-92](/photos/5/32/53267/to-92-3_standardbody__to-226_bentlead_sml.jpg)
MCR100-4RLRMG
Manufacturer Part Number
MCR100-4RLRMG
Description
THYRISTOR SCR 0.8A 200V TO-92
Manufacturer
ON Semiconductor
Datasheet
1.MCR100-6RLG.pdf
(7 pages)
Specifications of MCR100-4RLRMG
Scr Type
Sensitive Gate
Voltage - Off State
200V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
10A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current - On State (it (rms) (max)
800mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (av)) (max)
-
100
90
80
70
60
50
40
30
20
10
Symbol
V
I
V
I
V
I
DRM
RRM
H
−40
DRM
RRM
TM
Figure 1. Typical Gate Trigger Current versus
−25
−10
T
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
J
, JUNCTION TEMPERATURE (°C)
5
Junction Temperature
20
35
50
Voltage Current Characteristic of SCR
65
80
http://onsemi.com
95
110
I
Reverse Avalanche Region
RRM
Anode −
3
Reverse Blocking Region
at V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40
RRM
(off state)
−25
Figure 2. Typical Gate Trigger Voltage versus
on state
−10
T
J
, JUNCTION TEMPERATURE (°C)
+ Current
5
Junction Temperature
20
Forward Blocking Region
I
H
35
V
TM
(off state)
50
I
DRM
65
Anode +
at V
DRM
80
+ Voltage
95
110