NYC0102BLT1G ON Semiconductor, NYC0102BLT1G Datasheet - Page 2

SCR REVERSE BLOCK THY SOT-23

NYC0102BLT1G

Manufacturer Part Number
NYC0102BLT1G
Description
SCR REVERSE BLOCK THY SOT-23
Manufacturer
ON Semiconductor
Datasheet

Specifications of NYC0102BLT1G

Scr Type
Sensitive Gate
Voltage - Off State
200V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (rms)) (max)
250mA
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
6mA
Current - Off State (max)
1µA
Current - Non Rep. Surge 50, 60hz (itsm)
7A @ 60Hz
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Current - On State (it (rms) (max)
250mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - On State (it (av)) (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NYC0102BLT1G
Manufacturer:
ON
Quantity:
15 000
Part Number:
NYC0102BLT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NYC0102BLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Peak Repetitive Forward Blocking Current
Peak Repetitive Reverse Blocking Current
Peak Forward On−State Voltage
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Gate Non−Trigger Voltage
Latching Current
Gate Reverse Voltage
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of On−State Current
(V
(V
(I
(V
(V
(I
(V
(I
(I
(R
(I
Symbol
V
I
V
I
V
I
TM
T
G
RG
DRM
RRM
H
G
DRM
RRM
TM
DRM
DRM
D
D
D
GK
= 50 mA, R
= 1.0 mA, R
= 2xI
= 12 V, R
= 12 V, R
= V
= 0.4 A, t
= 10 mA)
= 1 kW, T
= 200 V, R
= 200 V, R
DRM
GT
60 Hz, t
, R
p
L
L
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
GK
L
C
< 1 ms, T
= 100 W, T
= 100 W, T
GK
= 3.3 kW, T
= 125°C)
GK
GK
= 1 kW, T
= 1 kW, T
r
= 1 kW)
= 1 kW)
< 100 ns, T
C
C
C
= 25°C)
C
C
C
= 25°C)
= 25°C)
= 25°C)
= 125°C)
= 25°C)
Characteristic
J
= 125°C)
(T
Voltage Current Characteristic of SCR
C
= 25°C unless otherwise noted.)
http://onsemi.com
I
Reverse Avalanche Region
RRM
Anode −
2
Reverse Blocking Region
T
T
T
T
C
C
at V
C
C
= 125°C
= 125°C
= 25°C
= 25°C
RRM
(off state)
on state
Symbol
I
I
dv/dt
V
V
V
V
di/dt
DRM
RRM
I
GT
I
I
GD
RG
TM
GT
H
L
+ Current
Forward Blocking Region
I
Min
200
H
0.1
8.0
V
TM
(off state)
Typ
I
DRM
Anode +
at V
Max
100
100
200
DRM
1.0
1.0
1.7
0.8
6.0
7.0
50
+ Voltage
V/ms
A/ms
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
V

Related parts for NYC0102BLT1G