NYC222STT1G ON Semiconductor, NYC222STT1G Datasheet - Page 2

• Manufacturer Part Number: NYC222STT1G
• Description: SCR 1.5A 50V SOT-223
• Manufacturer: ON Semiconductor

Specifications of NYC222STT1G

• Scr Type: Sensitive Gate
• Voltage - Off State: 50V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (rms)) (max): 1.5A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 15A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current - On State (it (rms) (max): 1.5A
• Breakover Current Ibo Max: 15 A
• Rated Repetitive Off-state Voltage Vdrm: 50 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - On State (it (av)) (max): -
• Lead Free Status / Rohs Status: Details

2. Pulse Width = 1.0 ms, Duty Cycle v 1%.
3. R
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient PCB Mounted
Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On−State Voltage (Note 2)
Gate Trigger Current (dc) (Note 3)
Gate Trigger Voltage (dc) (Note 3)
Gate Non−Trigger Voltage
Holding Current
Critical Rate of Rise of Off−State Voltage
(V
(I
(V
(V
(V
(V
Initiating Current = 200 mA
(T
GK
Symbol
V
I
V
I
V
I
TM
DRM
RRM
H
AK
AK
AK
AK
AK
C
DRM
RRM
TM
Current not included in measurement.
= 110°C)
= 2.2 A Peak)
= Rated V
= 7 Vdc, R
= 7 Vdc, R
= V
= 12 V, R
DRM
, R
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
GK
DRM
L
L
L
= 100 W)
= 100 W)
= 100 W)
= 1000 W)
/V
RRM
; R
GK
Characteristic
Characteristic
= 1000 W)
(T
C
Voltage Current Characteristic of SCR
= 25°C unless otherwise noted.)
http://onsemi.com
I
Reverse Avalanche Region
Anode −
RRM
2
Reverse Blocking Region
T
T
T
T
T
T
T
T
T
C
C
C
at V
C
C
C
C
C
C
= −40°C
= −40°C
= −40°C
= 110°C
= 110°C
= 25°C
= 25°C
= 25°C
= 25°C
RRM
(off state)
on state
I
DRM
Symbol
dv/dt
Symbol
V
V
V
+ Current
I
GT
I
R
R
, I
TM
GD
GT
H
T
qJA
qJT
RRM
L
Forward Blocking Region
I
H
V
Min
0.1
TM
−
−
−
−
−
−
−
−
−
−
(off state)
Max
156
260
25
I
DRM
Typ
1.2
2.0
30
25
−
−
−
−
−
−
−
Anode +
at V
DRM
Max
200
200
500
1.7
0.8
1.2
5.0
10
10
−
−
+ Voltage
°C/W
°C/W
Unit
°C
V/ms
Unit
mA
mA
mA
mA
V
V
V