MCR703AT4G ON Semiconductor, MCR703AT4G Datasheet - Page 3

• Manufacturer Part Number: MCR703AT4G
• Description: THYRISTOR SCR 4A 100V DPAK
• Manufacturer: ON Semiconductor
• Type: SCRr

Specifications of MCR703AT4G

• Scr Type: Sensitive Gate
• Voltage - Off State: 100V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 2.2V
• Current - On State (it (av)) (max): 1.6A
• Current - On State (it (rms)) (max): 4A
• Current - Gate Trigger (igt) (max): 75µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 25A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 4A
• Peak Repetitive Off-state Voltage, Vdrm: 100V
• Gate Trigger Current Max, Igt: 25µA
• Current It Av: 2.6A
• On State Rms Current It(rms): 4A
• Peak Non Rep Surge Current Itsm 50hz: 25A
• Holding Current Max Ih: 5mA
• Rohs Compliant: Yes
• Repetitive Peak Off-state Volt: 100V
• Off-state Voltage: 100V
• Average On-state Current: 2.6A
• Hold Current: 5mA
• Gate Trigger Current (max): 75uA
• Gate Trigger Voltage (max): 800mV
• Peak Reverse Gate Voltage: 18V
• Package Type: DPAK
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 35A
• On State Voltage(max): 2.2@8.2AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 110C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR703AT4G; MCR703AT4GOSTR

100
105
100
1.0
0.1
110
Symbol
V
I
V
I
V
I
10
DRM
RRM
H
95
DRM
RRM
TM
0.5
0
Typical @ T
1.0
V
T
Figure 3. On−State Characteristics
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Parameter
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
Holding Current
Figure 1. RMS Current Derating
I
1.0
T(RMS)
J
= 25°C
Maximum @ T
1.5
, RMS ON-STATE CURRENT (AMPS)
2.0
2.0
J
= 25°C
2.5
3.0
3.0
Voltage Current Characteristic of SCR
Maximum @ T
30°
DC
3.5
4.0
J
= 110°C
4.0
60°
90°
120°
180°
http://onsemi.com
4.5
5.0
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
3
at V
0.01
1.0
0.1
RRM
5.0
4.0
3.0
2.0
1.0
(off state)
0
0.1
0
Figure 4. Transient Thermal Response
on state
Figure 2. On−State Power Dissipation
1.0
I
1.0
T(RMS)
+ Current
, RMS ON-STATE CURRENT (AMPS)
Forward Blocking Region
I
H
10
2.0
t, TIME (ms)
V
TM
(off state)
I
100
DRM
3.0
Anode +
at V
Z
qJC(t)
DRM
1000
= R
+ Voltage
4.0
qJC(t)
DC
180°
120°
90°
60°
30°
•r(t)
10,000
5.0