MCR12DSNT4G ON Semiconductor, MCR12DSNT4G Datasheet - Page 2

• Manufacturer Part Number: MCR12DSNT4G
• Description: THYRISTOR SCR 12A 800V DPAK
• Manufacturer: ON Semiconductor
• Type: SCRr

Specifications of MCR12DSNT4G

• Scr Type: Sensitive Gate
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.9V
• Current - On State (it (av)) (max): 7.6A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 6mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 12A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Average On-state Current: 7.6A
• Hold Current: 6mA
• Gate Trigger Current (max): 200uA
• Gate Trigger Voltage (max): 1V
• Peak Reverse Gate Voltage: 18V
• Package Type: DPAK
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 100A
• On State Voltage(max): 1.9@20AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 110C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR12DSNT4G; MCR12DSNT4GOSTR

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Ratings apply for negative gate voltage or R
5. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
6. R
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,− Junction−to−Case
Thermal Resistance
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes (Note 3)
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
Peak Reverse Gate Blocking Voltage, (I
Peak Reverse Gate Blocking Current, (V
Peak Forward On−State Voltage (Note 5), (I
Gate Trigger Current (Continuous dc) (Note 6)
Gate Trigger Voltage (Continuous dc) (Note 6)
Holding Current
Latching Current
Turn−On Time
Critical Rate of Rise of Off−State Voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(V
(V
(V
(V
(V
(Source Voltage = 12 V, R
(V
(V
GK
AK
D
D
D
D
D
D
current not included in measurement.
= 12 V, R
= 12 V, R
= 12 V, Initiating Current = 200 mA, R
= 12 V, I
= Rated V
= 0.67 x Rated V
= Rated V
G
L
L
DRM
= 2.0 mA, R
DRM
= 100 W)
= 100 W)
− Junction−to−Ambient (Note 2)
, Rise Time = 20 ns, Pulse Width = 10 ms)
− Junction−to−Ambient
or V
DRM
RRM
, Exponential Waveform, R
S
GK
= 6.0 KW, I
; R
= 1 kW)
Characteristics
Characteristic
GK
= 1.0 KW)
GR
(T
GR
T
J
= 16 A(pk), R
= 10 mA)
= 25°C unless otherwise noted)
TM
GK
= 10 V)
GK
= 20 A)
= 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
= 1 kW)
GK
GK
http://onsemi.com
= 1.0 KW, T
= 1.0 KW)
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
= 25°C
= 110°C
= 25°C
= −40°C
= 25°C
= −40°C
= 110°C
= 25°C
= −40°C
= 25°C
= −40°C
2
J
= 110°C)
Symbol
Symbol
V
I
R
I
I
dv/dt
R
R
DRM
V
V
RRM
GRM
I
GRM
tgt
T
GT
I
qJC
qJA
qJA
I
TM
GT
H
L
L
,
0.45
Min
5.0
0.2
0.5
0.5
2.0
10
−
−
−
−
−
−
−
−
−
Max
12.5
0.65
Typ
260
2.2
1.3
1.0
1.0
2.0
88
80
12
10
−
−
−
−
−
−
−
−
Max
500
200
300
1.2
1.9
1.0
1.5
6.0
6.0
5.0
10
18
10
10
−
−
°C/W
V/ms
Unit
Unit
mA
mA
°C
mA
mA
mA
ms
V
V
V