MCR8DCNT4G ON Semiconductor, MCR8DCNT4G Datasheet - Page 3

• Manufacturer Part Number: MCR8DCNT4G
• Description: THYRISTOR SCR 8A 800V DPAK-4
• Manufacturer: ON Semiconductor

Specifications of MCR8DCNT4G

• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.8V
• Current - On State (it (av)) (max): 5.1A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 30mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 80A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 8A
• Breakover Current Ibo Max: 80 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 30 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR8DCNT4G; MCR8DCNT4GOSTR

125
120
105
100
115
110
100
Symbol
V
I
V
I
V
I
1.0
0.1
DRM
RRM
H
10
DRM
RRM
TM
0
0
TYPICAL @ T
V
Figure 1. Average Current Derating
T
1.0
I
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 3. On−State Characteristics
T(AV)
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
1.0
a = 30°
, AVERAGE ON−STATE CURRENT (AMPS)
J
= 25°C
2.0
MAXIMUM @ T
2.0
3.0
60°
J
= 25°C
3.0
Voltage Current Characteristic of SCR
90°
MAXIMUM @ T
4.0
a = Conduction
120°
MCR8DCM, MCR8DCN
4.0
Angle
5.0
J
a
180°
http://onsemi.com
= 125°C
dc
6.0
5.0
I
Reverse Avalanche Region
RRM
Anode −
Reverse Blocking Region
3
at V
0.01
1.0
0.1
RRM
8.0
6.0
4.0
2.0
(off state)
10
0
0.1
0
a = Conduction
Figure 4. Transient Thermal Response
on state
Figure 2. On−State Power Dissipation
Angle
a = 30°
1.0
I
T(AV)
1.0
a
+ Current
, AVERAGE ON−STATE CURRENT (AMPS)
2.0
Forward Blocking Region
I
H
10
60°
t, TIME (ms)
V
TM
(off state)
3.0
I
DRM
100
90°
Z
qJC(t)
Anode +
4.0
at V
120°
= R
DRM
qJC(t)
1000
+ Voltage
5.0
Sr(t)
180°
dc
10 K
6.0