2N6402G ON Semiconductor, 2N6402G Datasheet - Page 3

• Manufacturer Part Number: 2N6402G
• Description: THYRISTOR SCR 16A 200V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of 2N6402G

• Scr Type: Standard Recovery
• Voltage - Off State: 200V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 10A
• Current - On State (it (rms)) (max): 16A
• Current - Gate Trigger (igt) (max): 30mA
• Current - Hold (ih) (max): 40mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 160A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current - On State (it (rms) (max): 16A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
I
V
I
V
I
128
124
120
108
104
100
116
112
DRM
RRM
H
DRM
RRM
TM
0
1.0
I
T(AV)
Figure 1. Average Current Derating
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
2.0
3.0
= 30
4.0
5.0
60
Voltage Current Characteristic of SCR
6.0
= CONDUCTION ANGLE
90
7.0
120
8.0
http://onsemi.com
2N6400 Series
9.0
180
dc
I
Reverse Avalanche Region
Anode -
RRM
10
Reverse Blocking Region
3
at V
8.0
6.0
4.0
2.0
RRM
16
14
12
10
(off state)
0
0
Figure 2. Maximum On-State Power Dissipation
1.0
I
T
T(AV)
J
on state
125 C
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
2.0
+ Current
3.0
= 30
Forward Blocking Region
I
H
4.0
V
TM
(off state)
5.0
60
I
DRM
6.0
= CONDUCTION ANGLE
Anode +
90
at V
7.0
DRM
120
+ Voltage
8.0
9.0
180
dc
10