MCR16NG ON Semiconductor, MCR16NG Datasheet - Page 2

• Manufacturer Part Number: MCR16NG
• Description: THYRISTOR SCR 16A 800V TO220AB
• Manufacturer: ON Semiconductor

Specifications of MCR16NG

• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (rms)) (max): 16A
• Current - Gate Trigger (igt) (max): 20mA
• Current - Hold (ih) (max): 40mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 160A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current - On State (it (rms) (max): 16A
• Current Squared Time Rating: 106
• Current, Forward: 16 A
• Current, Surge: 160 A
• Package Type: TO-220AB
• Primary Type: SCR
• Resistance, Thermal, Junction To Case: 1.5 °C/W
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -40 to +125 °C
• Voltage, Forward: 1.7 V
• Voltage, Reverse: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - On State (it (av)) (max): -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: MCR16NGOS

2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On−State Voltage (Note 2)
Gate Trigger Current (Continuous dc)
Gate Trigger Voltage (Continuous dc)
Hold Current
Latch Current
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of On−State Current
Symbol
V
I
V
I
V
I
(V
(I
(V
(V
(Anode Voltage = 12 V, Initiating Current = 200 mA, Gate Open)
(V
(V
(I
DRM
RRM
H
TM
PK
DRM
RRM
TM
AK
D
D
D
D
= 12 V, R
= 12 V, R
= 12 V, Ig = 200 mA)
= Rated V
= 50 A, Pw = 30 ms, diG/dt = 1 A/msec, Igt = 50 mA)
= 32 A)
= Rated V
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
L
L
DRM
= 100 W)
= 100 W)
DRM
, Exponential Waveform, Gate Open, T
or V
Junction−to−Case
Junction−to−Ambient
RRM
, Gate Open)
Characteristic
Characteristic
(T
Voltage Current Characteristic of SCR
J
= 25 C unless otherwise noted)
http://onsemi.com
J
= 125 C)
MCR16N
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
2
at V
RRM
T
T
(off state)
J
J
= 25 C
= 125 C
on state
+ Current
Symbol
Symbol
I
R
R
I
dv/dt
DRM
V
V
di/dt
RRM
I
T
GT
I
qJC
qJA
I
TM
GT
H
L
L
Forward Blocking Region
,
I
H
V
TM
Min
100
2.0
0.5
4.0
(off state)
−
−
−
−
−
I
DRM
Value
62.5
0.65
Typ
260
300
1.5
10
25
30
−
−
−
−
Anode +
at V
DRM
Max
0.01
2.0
1.7
1.0
20
40
60
50
+ Voltage
−
V/ms
A/ms
Unit
Unit
C/W
mA
mA
mA
mA
V
V
C