2N6404G ON Semiconductor, 2N6404G Datasheet - Page 3
![THYRISTOR SCR 10A 600V TO220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
2N6404G
Manufacturer Part Number
2N6404G
Description
THYRISTOR SCR 10A 600V TO220AB
Manufacturer
ON Semiconductor
Specifications of 2N6404G
Scr Type
Standard Recovery
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
10A
Current - On State (it (rms)) (max)
16A
Current - Gate Trigger (igt) (max)
30mA
Current - Hold (ih) (max)
40mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
160A @ 60Hz
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current - On State (it (rms) (max)
16A
Current Squared Time Rating
145
Current, Forward
16 A
Current, Surge
160 A
Package Type
TO-220AB
Primary Type
SCR
Resistance, Thermal, Junction To Case
1.5 °C/W
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-40 to +125 °C
Voltage, Forward
1.7 V
Voltage, Reverse
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N6404GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N6404G
Manufacturer:
ON Semiconductor
Quantity:
218
Symbol
V
I
V
I
V
I
128
124
120
108
104
100
116
112
DRM
RRM
H
DRM
RRM
TM
0
1.0
I
T(AV)
Figure 1. Average Current Derating
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
2.0
3.0
= 30
4.0
5.0
60
Voltage Current Characteristic of SCR
6.0
= CONDUCTION ANGLE
90
7.0
120
8.0
http://onsemi.com
2N6400 Series
9.0
180
dc
I
Reverse Avalanche Region
Anode -
RRM
10
Reverse Blocking Region
3
at V
8.0
6.0
4.0
2.0
RRM
16
14
12
10
(off state)
0
0
Figure 2. Maximum On-State Power Dissipation
1.0
I
T
T(AV)
J
on state
125 C
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
2.0
+ Current
3.0
= 30
Forward Blocking Region
I
H
4.0
V
TM
(off state)
5.0
60
I
DRM
6.0
= CONDUCTION ANGLE
Anode +
90
at V
7.0
DRM
120
+ Voltage
8.0
9.0
180
dc
10