MCR08MT1 ON Semiconductor, MCR08MT1 Datasheet - Page 2
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MCR08MT1
Manufacturer Part Number
MCR08MT1
Description
THYRISTOR SCR 0.8A 600V SOT223
Manufacturer
ON Semiconductor
Datasheet
1.MCR08BT1G.pdf
(6 pages)
Specifications of MCR08MT1
Scr Type
Sensitive Gate
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
8A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Current - On State (it (rms) (max)
800mA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - On State (it (av)) (max)
-
Other names
MCR08MT1OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCR08MT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MCR08MT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2. Pulse Test: Pulse Width
3. R
4. R
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
Peak Forward On-State Voltage (Note 2) (I
Gate Trigger Current (Continuous dc) (Note 4) (V
Holding Current (Note 3) (V
Gate Trigger Voltage (Continuous dc) (Note 4) (V
Critical Rate-of-Rise of Off State Voltage
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
(V
(V
GK
GK
Symbol
V
I
V
I
V
I
0.984
DRM
RRM
H
25.0
AK
pk
DRM
RRM
TM
= 1000 W is included in measurement.
is not included in measurement.
= Rated V
= Rated V
0.079
0.079
2.0
2.0
0.096
2.44
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
DRM
DRM
0.059
1.5
, T
0.059
or V
1.5
0.091
C
2.3
= 110 C, R
AK
RRM
0.059
300 ms, Duty Cycle
0.15
0.472
1.5
0.096
3.8
12.0
2.44
= 12 Vdc, Initiating Current = 20 mA)
0.091
, R
2.3
Characteristic
GK
0.059
0.059
1.5
1.5
= 1 kW
GK
(T
0.244
0.096
= 1 kW, Exponential Method)
2.44
6.2
T
inches
C
mm
= 1.0 A Peak)
= 25 C unless otherwise noted)
AK
AK
2%.
= 12 Vdc, R
= 12 Vdc, R
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
http://onsemi.com
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
L
L
MATERIAL: G10 FIBERGLASS BASE EPOXY
= 100 W)
= 100 W)
I
Reverse Avalanche Region
Anode −
RRM
2
Reverse Blocking Region
at V
T
T
J
J
Voltage Current Characteristic of SCR
= 25 C
= 110 C
RRM
(off state)
on state
I
DRM
Symbol
dv/dt
V
+ Current
V
I
GT
I
, I
TM
GT
H
RRM
Forward Blocking Region
I
H
V
Min
10
TM
−
−
−
−
−
−
(off state)
I
DRM
Typ
−
−
−
−
−
−
−
Anode +
at V
DRM
Max
200
200
1.7
5.0
0.8
10
−
+ Voltage
V/ms
Unit
mA
mA
mA
mA
V
V