MCR12DCMT4 ON Semiconductor, MCR12DCMT4 Datasheet - Page 2

THYRISTOR SCR 12A 600V DPAK

MCR12DCMT4

Manufacturer Part Number
MCR12DCMT4
Description
THYRISTOR SCR 12A 600V DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCR12DCMT4

Scr Type
Standard Recovery
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
1V
Voltage - On State (vtm) (max)
1.9V
Current - On State (it (av)) (max)
7.8A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
20mA
Current - Hold (ih) (max)
40mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
100A @ 60Hz
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current - On State (it (rms) (max)
12A
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MCR12DCMT4OSCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCR12DCMT4G
Manufacturer:
ON Semiconductor
Quantity:
1 850
Part Number:
MCR12DCMT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MCR12DCMT4G
Manufacturer:
ON/安森美
Quantity:
20 000
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MCR12DCMT4
MCR12DCMT4G
MCR12DCNT4
MCR12DCNT4G
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes (Note 3)
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On−State Voltage (Note 4) (I
Gate Trigger Current (Continuous dc)
Gate Trigger Voltage (Continuous dc)
Gate Non−Trigger Voltage
Holding Current
Latching Current
Critical Rate of Rise of Off−State Voltage
(V
(V
(V
(V
(V
(V
(V
(V
AK
D
D
D
D
D
D
D
= 12 V, R
= 12 V, R
= 12 V, R
= 12 V, Initiating Current = 200 mA, Gate Open)
= 12 V, I
= 12 V, I
= Rated V
= Rated V
G
G
L
L
L
DRM
= 20 mA, T
= 40 mA, T
= 100 W)
= 100 W)
= 100 W)
DRM
Device
, Exponential Waveform, Gate Open, T
or V
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
RRM
J
J
= 25°C)
= −40°C)
, Gate Open)
Characteristic
Characteristic
(T
J
TM
= 25°C unless otherwise noted)
= 20 A)
MCR12DCM, MCR12DCN
T
T
T
T
T
T
T
T
T
http://onsemi.com
J
J
J
J
J
J
J
J
J
= 25°C
= 125°C
= 25°C
= *40°C
= 25°C
= *40°C
= 125°C
= 25°C
= −40°C
J
= 125°C)
(Pb−Free)
(Pb−Free)
Package
DPAK
DPAK
DPAK
DPAK
2
Symbol
Symbol
I
R
I
dv/dt
R
R
V
V
DRM,
V
RRM
I
T
GT
I
qJC
qJA
qJA
I
TM
GD
GT
H
L
L
2500 / Tape and Reel
2500 / Tape and Reel
2500 / Tape and Reel
2500 / Tape and Reel
Min
2.0
0.5
0.2
4.0
4.0
50
Shipping
Max
0.65
260
Typ
200
2.2
1.3
7.0
88
80
22
22
Max
0.01
5.0
1.9
1.0
2.0
20
40
40
80
40
80
°C/W
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V
V

Related parts for MCR12DCMT4