MMDT4126-7-F Diodes Inc, MMDT4126-7-F Datasheet - Page 2

• Manufacturer Part Number: MMDT4126-7-F
• Description: TRANSISTOR DUAL PNP 25V SOT363
• Manufacturer: Diodes Inc

Specifications of MMDT4126-7-F

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: - 4 V
• Continuous Collector Current: - 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMDT4126-FDITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
DS30160 Rev. 9 - 2
250
350
300
200
150
100
4. Short duration pulse test used to minimize self-heating effect.
50
0
0
25
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
A
Characteristic
50
Ambient Temperature
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
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V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
C
I
C
h
CBO
EBO
NF
2 of 4
h
f
obo
FE
ibo
T
fe
Min
-4.0
120
120
250
-25
-25
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
10
1
0.1
-0.40
-0.95
Max
360
480
-50
-50
4.5
4.0
10
⎯
⎯
⎯
⎯
⎯
Fig. 2, Input and Output Capacitance vs.
V , COLLECTOR-BASE VOLTAGE (V)
CB
MHz
Unit
nA
nA
dB
pF
pF
⎯
⎯
V
V
V
V
V
Collector-Base Voltage
1
I
I
I
V
V
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
C
C
E
C
C
C
C
CB
EB
CB
EB
CE
CE
CE
S
= -10μA, I
= -10μA, I
= -1.0mA, I
= -2.0mA, V
= -50mA, V
= -50mA, I
= -50mA, I
= 1.0kΩ, f = 1.0kHz
= -20V, I
= -3.0V, I
= -1.0V, I
= -5.0V, I
= -5.0V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -20V, I
Test Condition
E
C
E
B
B
C
B
C
C
C
10
= 0
= 0
CE
CE
= 0V
= -5.0mA
= -5.0mA
= -10mA,
= 0
= 0V
= -2.0mA,
= -100μA,
= -1.0V
= -1.0V
© Diodes Incorporated
E
C
MMDT4126
= 0
= 0
100