ZXTC2061E6TA Diodes Zetex, ZXTC2061E6TA Datasheet

TRANSISTOR DUAL 12V 1A SOT23-6

ZXTC2061E6TA

Manufacturer Part Number
ZXTC2061E6TA
Description
TRANSISTOR DUAL 12V 1A SOT23-6
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTC2061E6TA

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
5A, 3.5A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
180mV @ 100mA, 5A / 200mV @ 350mA, 3.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
480 @ 1A, 2V / 290 @ 1A, 2V
Power - Max
1.1W
Frequency - Transition
260MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
ZXTC2061E6TR
ZXTC2061E6
12V, SOT23-6, complementary medium power transistors
Summary
BV
h
I
V
R
P
Description
Advanced process capability has been used to
achieve
Combining NPN and PNP transistors in the
SOT23-6 package provides a compact solution
for the intended applications.
Features
Applications
Ordering information
Device marking
2061
Issue 1 - November 2007
© Zetex Semiconductors plc 2007
C(cont)
DEVICE
ZXTC2061E6TA
FE
D
CE(sat)
CE(sat)
CEO
NPN-PNP combination
Very low saturation voltage
High gain
SOT23-6 package
MOSFET and IGBT gate driving
Motor drive
= 1.1W
> 500
> 12 (-12)V
= 5 (-3.5)A
= 25 (45)m
< 35 (-70)mV @ 1A
this
high
performance
Reel size
(inches)
7
Tape width
device.
(mm)
8
1
Quantity
per reel
3000
B1
E1
C1
C1
C2
B1
B2
www.zetex.com
Top view
E2
C2
E1
B2
E2

Related parts for ZXTC2061E6TA

ZXTC2061E6TA Summary of contents

Page 1

... Very low saturation voltage • High gain • SOT23-6 package Applications • MOSFET and IGBT gate driving • Motor drive Ordering information DEVICE Reel size (inches) ZXTC2061E6TA Device marking 2061 Issue 1 - November 2007 © Zetex Semiconductors plc 2007 device. Tape width Quantity (mm) per reel ...

Page 2

Absolute maximum and thermal ratings PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation at T =25°C A Linear derating factor Power dissipation at T =25°C A Linear derating factor Power dissipation ...

Page 3

Thermal characteristics Issue 1 - November 2007 © Zetex Semiconductors plc 2007 ZXTC2061E6 3 www.zetex.com ...

Page 4

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Parameter Symbol Collector-base BV breakdown voltage Collector-emitter BV breakdown voltage (base open) Emitter-base BV breakdown voltage Collector-base cut-off I CBO current Emitter-base cut-off I EBO current Collector-emitter V CE(sat) saturation voltage ...

Page 5

NPN electrical characteristics Issue 1 - November 2007 © Zetex Semiconductors plc 2007 ZXTC2061E6 5 www.zetex.com ...

Page 6

PNP electrical characteristics Issue 1 - November 2007 © Zetex Semiconductors plc 2007 ZXTC2061E6 6 www.zetex.com ...

Page 7

Package outline SOT23-6 Package outline DIM Min. A 0.90 A1 0.00 A2 0.90 b 0.35 C 0.09 D 2.70 E 2.20 E1 1. 0° Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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