ZXTD4591AM832TA Diodes Zetex, ZXTD4591AM832TA Datasheet - Page 2

• Manufacturer Part Number: ZXTD4591AM832TA
• Description: TRANS NPN/PNP 40V 8MLP
• Manufacturer: Diodes Zetex

Specifications of ZXTD4591AM832TA

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 2A, 1.5A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXTD4591AM832TATR

Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of
Issue 2 - April 2008
© Zetex Semiconductors plc 2008
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Peak pulse current
Continuous collector current
Continuous collector current
Base current
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Storage temperature range
Junction temperature range
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected
to each half of the dual device.
conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with
one half connected to each half of the dual device.
lead connections only.
exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half
connected to each half of the dual device.
exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half
connected to each half of the dual device.
the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick
FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W
giving a power rating of Ptot = 500mW.
(a)(f)
(b)(f)
(c)(f)
(d)(f)
(d)(g)
(e)(g)
A
A
A
A
A
A
=25°C
=25°C
=25°C
=25°C
=25°C
=25°C
(a)(f)
(b)(f)
(a)(f)
(b)(f)
(c)(f)
(d)(f)
(d)(g)
(e)(g)
2
Symbol
Symbol
V
V
V
R
R
R
R
R
R
T
I
P
P
P
P
P
P
CBO
CM
CEO
EBO
I
I
I
T
θJA
θJA
θJA
θJA
θJA
θJA
stg
C
C
B
D
D
D
D
D
D
j
NPN
2.5
ZXTD4591AM832
40
40
3
2
5
-55 to +150
Value
2.45
19.6
1.13
13.6
83.3
73.5
41.7
300
125
111
150
1.5
1.7
12
24
51
1
8
9
3
PNP
-1.5
-2.0
-40
-40
-5
-3
www.zetex.com
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
Unit
mA
°C
°C
W
W
W
W
W
W
A
A
A
V
V
V