BC847BS Fairchild Semiconductor, BC847BS Datasheet
BC847BS
Manufacturer Part Number
BC847BS
Description
TRANSISTOR NPN 45V 100MA SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.BC847BS.pdf
(3 pages)
Specifications of BC847BS
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
210mW
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
310 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
110
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC847BS
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©2007 Fairchild Semiconductor Corporation
BC847BS Rev. A
BC847BS
NPN Multi-chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 200 mA.
Sourced from Process 07.
Absolute Maximum Ratings
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
V
V
V
V
I
T
P
R
Symbol
Symbol
C
J,
CBO
CES
CEO
EBO
D
θ JA
T
STG
Collector-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature and Storage Temperature
Total Device Dissipation
Derate above 25℃
Thermal Resistance, Junction to Ambient
Dual NPN Signal Transister
Characteristic
Parameter
SC70-6
* T
Mark: .1F
a
= 25°C unless otherwise noted
* T
a
= 25°C unless otherwise noted
C1
B2
Pin #1
E2
1
E1
B1
C2
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
-55 ~ +150
Value
Max
100
210
625
6.0
1.6
50
50
45
www.fairchildsemi.com
June 2007
Units
Units
mW/℃
℃/W
mW
mA
°C
V
V
V
V
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BC847BS Summary of contents
Page 1
... P D Derate above 25℃ R Thermal Resistance, Junction to Ambient θ JA *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. ©2007 Fairchild Semiconductor Corporation BC847BS Rev NOTE: The pinouts are symmetrical; pin 1 and pin SC70-6 4 are interchangeable. Units inside the carrier can C2 ...
Page 2
... DC Current Gain FE V Collector-Emitter Saturation Voltage sat CE Emitter-Base Breakdown Voltage on BE Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. BC847BS Rev 25°C unless otherwise noted a Test Condition = 10 μ μ ...
Page 3
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BC847BS Rev. A OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...