MMDT4413-7 Diodes Zetex, MMDT4413-7 Datasheet - Page 3

• Manufacturer Part Number: MMDT4413-7
• Description: TRANS COMP PAIR 40V SOT-363
• Manufacturer: Diodes Zetex

Specifications of MMDT4413-7

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V / 100 @ 150mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 250MHz, 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMDT4413DITR; MMDT4413TR; MMDT4413TR

Electrical Characteristics, PNP 4403 Section
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
DS30121 Rev. 10 - 2
Characteristic
V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
h
C
C
h
CEX
I
h
h
h
f
BL
t
t
FE
t
t
oe
eb
re
T
d
s
cb
ie
fe
r
f
www.diodes.com
-0.75
Min
-5.0
100
100
200
-40
-40
1.5
0.1
1.0
30
60
20
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3 of 6
@T
A
= 25°C unless otherwise specified
-0.40
-0.75
-0.95
-1.30
-100
-100
Max
300
500
100
225
8.5
8.0
30
15
15
20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
x 10
Unit
MHz
nA
nA
pF
pF
kΩ
μS
⎯
⎯
ns
ns
ns
ns
V
V
V
V
V
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
= -100μA, I
= -150mA, I
= -100μA, I
= -1.0mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -150mA, V
= -500mA, V
= -500mA, I
= -150mA, I
= -500mA, I
= I
= -35V, V
= -35V, V
= -10V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -10V, I
= -10V, I
= -30V, I
= -30V, I
B2
= -2.0V, I
= -15mA
Test Condition
C
C
C
C
B
C
E
EB(OFF)
EB(OFF)
B
B
B
B
= -1.0mA, f = 1.0kHz
= -20mA, f = 100MHz
CE
CE
CE
CE
CE
= -150mA,
= -150mA,
= 0
= 0
= 0
= -15mA
= -50mA
= -15mA
= -50mA
B1
= -2.0V
= -1.0V
= -1.0V
= -1.0V
= -2.0V
= -15mA
= -0.4V
= -0.4V
© Diodes Incorporated
E
C
= 0
= 0
MMDT4413