MMDT4401-7 Diodes Zetex, MMDT4401-7 Datasheet - Page 2

• Manufacturer Part Number: MMDT4401-7
• Description: TRANSISTOR DUAL NPN 40V SOT-363
• Manufacturer: Diodes Zetex

Specifications of MMDT4401-7

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMDT4401DITR; MMDT4401TR; MMDT4401TR

Electrical Characteristics
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30111 Rev. 13 - 2
150
300
250
100
200
6.
50
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
0
Short duration pulse test used to minimize self-heating effect.
25
T , AMBIENT TEMPERATURE (°C)
A
50
Characteristic
75
100 125
@T
A
= 25°C unless otherwise specified
150
Note 1
175
200
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V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
h
C
C
h
2 of 4
CEX
I
h
h
h
f
t
t
BL
t
t
FE
oe
T
cb
eb
ie
re
fe
d
s
r
f
1,000
0.75
Min
100
250
6.0
1.0
0.1
1.0
60
40
20
40
80
40
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
10
1
0.1
Fig. 2 Typical DC Current Gain vs. Collector Current
T = -25°C
A
Max
0.40
0.75
0.95
100
100
300
500
225
1.2
6.5
8.0
30
15
30
15
20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I , COLLECTOR CURRENT (mA)
C
T = 125°C
1
A
x 10
MHz
Unit
nA
nA
kΩ
μS
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
T = +25°C
A
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
10
= 100μA, I
= 150mA, I
= 100μA, I
= 1.0mA, I
= 100µA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 500mA, I
= 150mA, I
= 500mA, I
= I
= 35V, V
= 35V, V
= 10V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 10V, I
= 30V, I
= 30V, I
B2
= 2.0V, I
= 15mA
Test Condition
C
C
C
C
E
B
C
EB(OFF)
EB(OFF)
B
B
B
B
100
CE
= 1.0mA,
= 20mA,
= 150mA,
= 150mA,
CE
CE
CE
CE
= 0
= 0
= 0
= 15mA
= 50mA
= 15mA
= 50mA
V
B1
= 1.0V
= 1.0V
= 1.0V
= 1.0V
= 2.0V
CE
= 15mA
= 1.0V
= 0.4V
= 0.4V
© Diodes Incorporated
1,000
C
E
MMDT4401
= 0
= 0