DMMT3904W-7 Diodes Inc, DMMT3904W-7 Datasheet - Page 2

• Manufacturer Part Number: DMMT3904W-7
• Description: TRANSISTOR NPN SM SIGNAL SOT-363
• Manufacturer: Diodes Inc

Specifications of DMMT3904W-7

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: DMMT3904W-7; DMMT3904WDITR; Q1689979

Electrical Characteristics
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain (Note 7)
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Voltage Matching
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30311 Rev. 11 - 2
6.
7.
The DC current gain, h
Short duration pulse test used to minimize self-heating effect.
and Base Emitter Saturation Voltage, V
Characteristic
FE
, (matched at I
@T
A
C
BE(SAT)
= 25°C unless otherwise specified
= 10mA and V
are matched with typical matched tolerances of 1% and maximum of 2%.
CE
= 1.0V) Collector Emitter Saturation Voltage, V
V
V
V
Symbol
V
V
www.diodes.com
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
ΔV
C
I
C
h
CEX
h
NF
I
h
h
h
BL
f
t
t
obo
t
t
FE
ibo
oe
T
ie
re
fe
d
s
r
f
BE
2 of 4
0.65
Min
100
100
300
6.0
1.0
0.5
1.0
60
40
40
70
60
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
0.20
0.30
0.85
0.95
300
400
200
4.0
8.0
5.0
50
50
10
40
35
35
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
8
x 10
MHz
Unit
mV
nA
nA
kΩ
μS
dB
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
-4
CE
(
SAT)
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
,
CE
CE
CE
CB
EB
CE
CE
CE
CC
BE(off)
CC
S
= 10μA, I
= 10mA, I
= 10μA, I
= 1.0mA, I
= 100µA, V
= 1.0mA, V
= 10mA, V
= 50mA, V
= 100mA, V
= 50mA, I
= 10mA, I
= 50mA, I
= 1.0kΩ, f = 1.0kHz
= I
= 30V, V
= 30V, V
= 10V, I
= 5.0V, I
= 5V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 20V, I
= 3.0V, I
= 3.0V, I
B2
= -0.5V, I
= 1.0mA
Test Condition
C
C
E
B
B
B
B
C
C
B
C
EB(OFF)
EB(OFF)
= 2mA
C
C
= 0
= 0
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 1.0mA,
= 10mA,
= 0
= 100μA,
CE
CE
CE
CE
CE
= 10mA,
= 10mA,
B1
= 1.0V
= 1.0V
= 1.0V
= 1.0V
= 1.0V
= 1.0mA
= 3.0V
= 3.0V
© Diodes Incorporated
DMMT3904W
C
E
= 0
= 0