BC847PN-7-F Diodes Inc, BC847PN-7-F Datasheet - Page 2

• Manufacturer Part Number: BC847PN-7-F
• Description: TRANSISTOR NPN/PNP 45V SC70-6
• Manufacturer: Diodes Inc

Specifications of BC847PN-7-F

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 300MHz, 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 45V
• Transition Frequency Typ Ft: 300MHz
• Power Dissipation Pd: 200mW
• Dc Collector Current: -100mA
• Dc Current Gain Hfe: 290
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: BC847PN-7-F; BC847PN-FDITR; Q3456839

Electrical Characteristics, NPN Section
Electrical Characteristics, PNP Section
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
BC847PN
Document number: DS30278 Rev. 12 - 2
150
250
200
100
50
5. Short duration pulse test used to minimize self-heating effect.
0
0
Fig. 1 Power Dissipation vs. Ambient Temperature
R
θJA
Characteristic
Characteristic
= 625
T , AMBIENT TEMPERATURE ( C)
40
A
°C/W
(Total Device, Note 1)
80
120
(Note 5) V(
(Note 5) V(
(Note 5) V(
(Note 5) V(
(Note 5)
(Note 5)
(Note 5)
(Note 5) V(
(Note 5) V(
(Note 5)
(Note 5) V
(Note 5) V
(Note 5) V
(Note 5) V
(Note 5) V
(Note 5)
160
°
Symbol
Symbol
V
CE(SAT)
BE(SAT)
C
CE(SAT)
BE(SAT)
C
BR)CBO
BR)CEO
BE(ON)
I
I
BR)CBO
BR)CEO
BE(ON)
I
I
BR)EBO
BR)EBO
h
h
CBO
CBO
NF
CBO
CBO
NF
CBO
CBO
f
f
FE
FE
T
T
200
@T
www.diodes.com
@T
A
-600
Min
200
580
100
Min
220
100
A
-50
-45
50
45
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-5
= 25°C unless otherwise specified
6
= 25°C unless otherwise specified
2 of 4
-250
-700
-850
-650
Typ
290
200
700
900
660
300
Typ
290
200
3.5
2.0
-75
90
—
—
—
—
—
—
—
—
—
—
—
—
—
1,000
3
100
Fig. 2 Typical DC Current Gain vs. Collector Current (NPN)
10
1
0.01
-300
-650
-950
-750
-820
Max
Max
450
250
600
700
720
475
-4.0
5.0
6.0
-15
4.5
15
10
10
—
—
—
—
—
—
—
—
—
—
I , COLLECTOR CURRENT (mA)
C
0.1
MHz
MHz
Unit
Unit
mV
mV
mV
mV
mV
mV
nA
µA
dB
nA
µA
dB
pF
pF
—
—
V
V
V
V
V
V
I
I
I
V
I
I
I
I
V
V
V
V
V
V
V
f = 1.0kHz, Δf = 200Hz
I
I
I
V
I
I
I
I
V
V
V
V
V
V
V
f = 1.0kHz, Δf = 200Hz
C
C
E
C
C
C
C
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
CE
CE
CE
CE
CB
CB
CE
CB
CE
= 10μA, I
= 10mA, I
= 1μA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
= -10μA, I
= -10mA, I
= -1μA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
1.0
= 5.0V, I
= 5.0V, I
=5.0V, I
= 30V
= 30V, T
= 5.0V, I
= 10V, f = 1.0MHz
= 5V, I
= -5.0V, I
= -5.0V, I
= -5.0V, I
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
= -5V, I
C
C
C
Test Condition
Test Condition
B
C
= 0
B
B
B
C
B
= 0
C
C
C
= 200µA, R
B
B
B
A
= 0
B
B
= -200µA, R
= 0
C
C
C
A
C
= 0.5mA
= 0.5mA
= 0
= 10mA
B
B
= 0
= -0.5mA
= -0.5mA
= 2.0mA
= 2.0mA
= 150°C
= 10mA, f = 100MHz
10
= 5.0mA
= 5.0mA
= -2.0mA
= -2.0mA
= -10mA
= 150°C
= -10mA, f = 100MHz
= -5.0mA
= -5.0mA
BC847PN
© Diodes Incorporated
November 2008
G
G
= 2.0kΩ,
100
= 2.0kΩ,