BC847BPN,115 NXP Semiconductors, BC847BPN,115 Datasheet - Page 6

• Manufacturer Part Number: BC847BPN,115
• Description: TRANS NPN/PNP 100MA 45V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BC847BPN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 2
• Collector-emitter Voltage: 45V
• Collector-base Voltage(max): 50V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-1634-2; 934042530115; BC847BPN T/R

NXP Semiconductors
BC847BPN_4
Product data sheet
Fig 4.
Fig 6.
(mV)
V
BE
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
1200
1000
FE
600
500
400
300
200
100
800
600
400
200
0
10
0
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
2
= 5 V
= 5 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
10
1
1
1
(1)
(2)
(3)
10
(1)
(2)
(3)
10
10
2
10
I
C
I
2
C
(mA)
mgt727
mgt728
(mA)
Rev. 04 — 18 February 2009
10
10
3
3
Fig 5.
Fig 7.
45 V, 100 mA NPN/PNP general-purpose transistor
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
0.20
C
0.15
0.10
0.05
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
T
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
I
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
C
amb
amb
amb
amb
1
/I
B
= 20
= 25 C
= 55 C
= 25 C
= 150 C
1
1
2
(1)
(2)
(3)
10
I
B
(mA) = 4.0
3
BC847BPN
3.2
2.4
1.6
0.8
10
© NXP B.V. 2009. All rights reserved.
2
4
I
006aab422
006aab423
C
V
3.6
2.8
2.0
1.2
0.4
CE
(mA)
(V)
10
5
3
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