BC847CDW1T1G ON Semiconductor, BC847CDW1T1G Datasheet - Page 9

• Manufacturer Part Number: BC847CDW1T1G
• Description: TRANS NPN DUAL 45V 100MA SOT-363
• Manufacturer: ON Semiconductor

Specifications of BC847CDW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 420 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 420
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC847CDW1T1G; BC847CDW1T1GOSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
BC846BDW1T1G
BC847BDW1T1G
BC847BDW1T3G
BC847CDW1T1G
BC848CDW1T1G
-200
-100
-5.0
-2.0
-50
-10
0.001
0.01
1.0
0.1
-1.0
0
Figure 35. Active Region Safe Operating Area
0.02
0.05
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
Device
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
T
1.0
A
= 25°C
-10
T
BC558
BC557
BC556
J
1 s
= 25°C
Markings
10
-30 -45 -65 -100
1G
1B
1F
1F
1L
Figure 34. Thermal Response
3 ms
http://onsemi.com
t, TIME (ms)
100
9
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
or T
curves are valid for duty cycles to 10% provided T
150°C. T
Figure 34. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
P
(pk)
The safe operating area curves indicate I
The data of Figure 35 is based upon T
DUTY CYCLE, D = t
A
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
Package
is variable depending upon conditions. Pulse
1.0 k
t
1
J(pk)
t
2
may be calculated from the data in
1
/t
2
10 k
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJA
J(pk)
qJA
(t) = r(t) R
= 3285C/W MAX
10000 / Tape & Reel
− T
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
C
= P
Shipping
qJA
(pk)
J(pk)
100 k
1
R
qJC
C
= 150°C; T
(t)
−V
†
CE
J(pk)
limits
1.0 M
C
≤