NST3906DP6T5G ON Semiconductor, NST3906DP6T5G Datasheet - Page 2

• Manufacturer Part Number: NST3906DP6T5G
• Description: TRANSISTOR PNP DUAL GP SOT-963
• Manufacturer: ON Semiconductor

Specifications of NST3906DP6T5G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

4. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 4) (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product (I
Output Capacitance (V
Input Capacitance (V
Noise Figure (V
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(I
(I
(I
(I
(I
(I
(I
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
C
C
C
C
C
C
C
C
C
= −0.1 mA, V
= −1.0 mA, V
= −10 mA, V
= −50 mA, V
= −100 mA, V
= −10 mA, I
= −50 mA, I
= −10 mA, I
= −50 mA, I
Figure 1. Collector Emitter Saturation Voltage vs.
0
0.0001
I
C
/I
B
CE
= 10
B
B
B
B
CE
CE
CE
CE
= −5.0 V, I
= −1.0 mA)
= −5.0 mA)
= −1.0 mA)
= −5.0 mA)
CE
I
0.001
C
EB
= −1.0 V)
= −1.0 V)
= −1.0 V)
= −1.0 V)
, COLLECTOR CURRENT (A)
= −1.0 V)
CB
(V
(I
(V
(I
= −0.5 V, I
C
B1
Collector Current
= −5.0 V, I
CC
CC
CE
= −10 mA, I
= I
(Note 4)
C
= −3.0 V, V
= −3.0 V, I
= 30 Vdc, V
B2
= −100 mA, R
Characteristic
= −1.0 mA)
E
0.01
E
E
= 0 mA, f = 1.0 MHz)
C
C
= 10 mAdc, I
= 0 mA, f = 1.0 MHz)
V
B1
C
25°C
= 10 mAdc, V
= 10 mAdc, I
CE(sat)
BE
(T
EB
= −10 mA)
= −1.0 mA)
A
= 0.5 V)
S
= 3.0 Vdc)
= 25°C unless otherwise noted)
= 1.0 k Ω, f = 1.0 kHz)
= 150°C
−55°C
C
C
= 1.0 mAdc, I
0.1
E
= 0)
CE
= 0)
= 20 Vdc, f = 100 MHz)
http://onsemi.com
B
= 0)
1
2
350
300
250
200
150
100
50
0
0.0001
Figure 2. DC Current Gain vs. Collector Current
−55°C (5.0 V)
−55°C (1.0 V)
150°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
150°C (5.0 V)
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
0.001
I
CE(sat)
BE(sat)
C
C
h
CEX
I
NF
C
f
obo
t
t
FE
t
t
ibo
T
d
s
r
f
, COLLECTOR CURRENT (A)
−0.65
0.01
−5.0
Min
−40
−40
100
250
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.85
−0.95
Max
−0.4
10.0
−50
300
250
4.5
4.0
35
35
50
0.1
−
−
−
−
−
−
−
−
MHz
Unit
nA
dB
pF
pF
ns
ns
V
V
V
V
V
−
1