NST30010MXV6T1G ON Semiconductor, NST30010MXV6T1G Datasheet - Page 2

• Manufacturer Part Number: NST30010MXV6T1G
• Description: TRANSISTOR PNP DUAL PAIR SOT-563
• Manufacturer: ON Semiconductor

Specifications of NST30010MXV6T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NST30010MXV6T1G; NST30010MXV6T1GOSTR

1. PCB with 51 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
2. PCB with 250 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
3. h
4. V
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Total Device Dissipation,
Thermal Resistance
Thermal Resistance
Thermal Resistance
Thermal Resistance
Junction and Storage
Collector −Emitter Breakdown Voltage, (I
Collector −Emitter Breakdown Voltage, (I
Collector −Base Breakdown Voltage, (I
Emitter −Base Breakdown Voltage, (I
Collector Cutoff Current (V
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product, (I
Output Capacitance, (V
Noise Figure, (I
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
FE(1)
T
Derate above 25°C (Note 1)
T
Derate above 25°C (Note 2)
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
Temperature Range
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
BE(1)
A
A
C
C
C
C
C
C
C
C
C
C
= 25°C (Note 1)
= 25°C (Note 2)
= −10 mA, V
= −2.0 mA, V
= −2.0 mA, V
= −10 mA, I
= −100 mA, I
= −10 mA, I
= −100 mA, I
= −2.0 mA, V
= −10 mA, V
= −2.0 mA, V
/h
− V
FE(2)
Characteristic
BE(2)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
C
= −0.2 mA, V
is the absolute difference of one transistor compared to the other transistor within the same package.
B
B
CE
CE
B
B
CE
CE
CE
CE
= −0.5 mA)
= −1.0 mA)
= −5.0 mA)
= −10 mA)
= −5.0 V)
= −5.0 V)
= −5.0 V)
= −5.0 V) (Note 3)
= −5.0 V)
= −5.0 V) (Note 4)
CB
(V
CB
CB
= −10 V, f = 1.0 MHz)
= −30 V)
= −30 V, T
CE
Characteristic
= −5 Vdc, R
E
C
Two Devices Heated Total Package
C
= −1.0 mA)
A
Lead Attached to Heated Device
= −10 mA, V
= −10 mA)
C
C
Attached to Unheated Device
Unheated Device Heated by
(T
= 150°C)
Heated Device Heating Lead
= −10 mA)
= −10 mA, V
A
= 25°C unless otherwise noted)
S
One Heated Device
= 2 kW, f = 1 kHz, BW = 200Hz)
Heated Device
Parameter
CE
NST30010MXV6T1G
EB
= −5 Vdc, f = 100 MHz)
http://onsemi.com
= 0)
2
Symbol
T
R
J
Y
Y
Y
P
, T
qJA
JA
D
JL
JL
V
stg
h
BE(1) −
FE(1)/
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
BE(on)
C
CBO
h
NF
f
FE
T
ob
h
V
FE(2)
One Device
BE(2)
Heated
357
429
350
291
149
128
152
224
222
2.9
3.4
88
−0.60
−5.0
Min
−30
−30
−30
270
420
100
0.9
−55 to +150
−
−
−
−
−
−
−
−
−
−
−0.75
−0.90
Both Devices
Typ
520
1.0
1.0
500 (250 ea)
661 (331 ea)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Heated
FE
250
189
4.0
5.3
76
85
is used as numerator.
−
−
−
−
−0.30
−0.60
−0.75
−0.82
Max
−4.0
−15
800
2.0
4.5
10
−
−
−
−
−
−
−
−
−
mW/°C
mW/°C
°C/W
°C/W
°C/W
°C/W
MHz
Unit
Unit
mW
mW
mV
nA
dB
°C
mA
pF
V
V
V
V
V
V
V
−