MAT04FSZ-REEL Analog Devices Inc, MAT04FSZ-REEL Datasheet - Page 2
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MAT04FSZ-REEL
Manufacturer Part Number
MAT04FSZ-REEL
Description
TRANSISTOR NPN QUAD MONO 14SOIC
Manufacturer
Analog Devices Inc
Datasheet
1.MAT04FP.pdf
(12 pages)
Specifications of MAT04FSZ-REEL
Transistor Type
4 NPN (Quad)
Current - Collector (ic) (max)
30mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
60mV @ 100µA, 1mA
Current - Collector Cutoff (max)
5nA
Power - Max
350mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAT04FSZ-REEL
Manufacturer:
ADI/亚德诺
Quantity:
20 000
MAT04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
parameters (V
Parameter
Current Gain
Current Gain Match
Offset Voltage
Offset Voltage Change vs.
Offset Voltage Change vs. V
Bulk Emitter Resistance
Input Bias Current
Input Offset Current
Breakdown Voltage
Collector Saturation Voltage
Collector-Base Leakage Current
Noise Voltage Density
Gain Bandwidth Product
Output Capacitance
Input Capacitance
NOTES
1
2
3
4
5
Specifications subject to change without notice.
Current gain measured at I
Current gain match is defined as:
Measured at I
Guaranteed by design.
Sample tested.
Collector Current
C
OS
= 10 µA and guaranteed by design over the specified range of I
, I
OS
, ∆h
FE
C
) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.)
= 10 µA, 100 µA and 1 mA.
CB
∆
h
FE
=
Symbol
h
∆h
V
∆V
∆V
r
I
I
BV
V
I
e
f
C
C
T
100(
BE
B
OS
CBO
n
FE
OS
CE(SAT)
OBO
EBO
FE
OS
OS
CEO
/∆I
/∆V
∆
I
C
B
CB
I
)(
C
h
FE
Conditions
10 µA ≤ I
0 V ≤ V
I
0 V ≤ V
10 µA ≤ I
0 V ≤ V
10 µA ≤ I
V
10 µA ≤ I
0 V ≤ V
10 µA ≤ I
V
I
0 V ≤ V
I
I
I
V
V
I
f
I
V
f = 1 MHz
V
f = 1 MHz
O
(@ T
C
C
C
C
B
C
C
MIN
CB
CB
CB
CB
CB
BE
= 100 µA; I
= 1 kHz
= 100 µA
= 100 µA
= 100 µA; V
= 10 µA
= 1 mA; f
= 1 mA; V
= 0 V; I
= 0 V
= 0 V
= 40 V
= 0 V; f
= 15 V; I
A
)
= 25 C unless otherwise noted. Each transistor is individually tested. For matching
CB
CB
CB
CB
CB
C
C
C
C
C
3
4
≤ 30 V
≤ 30 V
≤ 30 V
≤ 30 V
≤ 30 V
5
≤ 1 mA
≤ 1 mA
≤ 1 mA
≤ 1 mA
≤ 1 mA
O
C
O
CE
E
= 0
C
= 10 Hz
C
= 100 Hz
CB
.
= 0
= 1 mA
= 10 V
1
2
3
3
= 0 V
Min
400
40
MAT04E
Typ
800
0.5
50
5
50
0.4
125
0.6
0.03
5
2
1.8
1.8
300
10
40
Max
2
200
25
100
0.6
250
5
0.06
3
2.5
2.5
Min
300
40
MAT04F
Typ
600
1
100
10
100
0.4
165
2
0.03
5
2
1.8
1.8
300
10
40
Max
4
400
50
200
0.6
330
13
0.06
4
3
3
Unit
%
µV
µV
µV
Ω
nA
nA
V
V
pA
nV/√Hz
nV/√Hz
nV/√Hz
MHz
pF
pF