BC848CDXV6T5 ON Semiconductor, BC848CDXV6T5 Datasheet

BC848CDXV6T5

Manufacturer Part Number

BC848CDXV6T5

Description

TRANS NPN DUAL LP 30V SOT563

Manufacturer

ON Semiconductor

Datasheet

1.BC847CDXV6T1G.pdf (5 pages)

Specifications of BC848CDXV6T5

Transistor Type

2 NPN (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

30V

Vce Saturation (max) @ Ib, Ic

600mV @ 5mA, 100mA

Dc Current Gain (hfe) (min) @ Ic, Vce

420 @ 2mA, 5V

Power - Max

500mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-6

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Current - Collector Cutoff (max)

Other names

BC848CDXV6T5OS

Current page: 1 of 5
Download datasheet (97Kb)

BC847CDXV6T1G,

BC847CDXV6T5G,

BC848CDXV6T1G

Dual General Purpose

Transistors

NPN Duals

applications. They are housed in the SOT−563 which is designed for

low power surface mount applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

April, 2011 − Rev. 3

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Total Device Dissipation, (Note 1)

Thermal Resistance,

Total Device Dissipation, (Note 1)

Thermal Resistance,

Junction and Storage

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Collector Current − Continuous

These transistors are designed for general purpose amplifier

These are Pb−Free Devices

Derate above 25°C

Junction-to-Ambient (Note 1)

Derate above 25°C

Junction-to-Ambient (Note 1)

Temperature Range

= 25°C

(Both Junctions Heated)

(One Junction Heated)

Characteristic

Rating

Symbol

CEO

CBO

EBO

Symbol

, T

qJA

stg

BC847

100

6.0

−55 to +150

Max

357

350

500

250

2.9

4.0

BC848

100

5.0

mW/°C

°C/W

mAdc

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

(Note: Microdot may be in either location)

(3)

(4)

ORDERING INFORMATION

MARKING DIAGRAMS

http://onsemi.com

BC847CDXV6T1

= Device Code

= Date Code

= Pb−Free Package

CASE 463A

x = G or M

SOT−563

(5)

1x M G

Publication Order Number:

(2)

BC847CDXV6T1/D

(1)

(6)

Related parts for BC848CDXV6T5

BC848CDXV6T5 Summary of contents

Page 1

BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features • These are Pb−Free Devices MAXIMUM ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mA) C Collector −Emitter Breakdown Voltage ( mA Collector −Base Breakdown Voltage ( mA) C Emitter −Base Breakdown Voltage ...

Page 3

I , COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1 1 0.9 −55°C ...

Page 4

T A 1.6 1 0.8 0.4 0 0.02 0.1 1 BASE CURRENT (mA) B Figure 5. Collector Saturation Region 10 ...

Page 5

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords

bc848c
bc848
bc848cpd
bc848cpdw1t1g
bc848cdw1t1g
bc848cdw1t1
bc848cdw
BC848CDXV6T5 datasheet
BC848CDXV6T5 data sheet
BC848CDXV6T5 pdf datasheet
BC848CDXV6T5 component
BC848CDXV6T5 part
BC848CDXV6T5 distributor
BC848CDXV6T5 RoHS
BC848CDXV6T5 datasheet download